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• mirdas55

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• Transistor de efecto de campo
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• Cmos
• Mosfet
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本 土 的 品 牌， 世 界 級 的 品 質， 專 業 的 服 務 LocalBr and,wor l dcl assQual i t y,Pr of essi onalSer vi ce

Schottky Diodes

1. SOD–923 Surface Mount Schottky Diodes 2. SOD–723 Surface Mount Schottky Diodes 3. SC–79/ SOD–523 Surface Mount Schottky Diodes 4. SC–76/ SOD–323 Surface Mount Schottky Diodes 5. SOD–123 Surface Mount Schottky Diodes 6. SC–89 Surface Mount Schottky Diodes 7. SC–70/ SOT–323 Surface Mount Schottky Diodes 8. SOT–23/ TO–236AB Surface Mount Schottky Diodes 9. SC–88 Surface Mount Schottky Diodes

Switching Diodes

Diodes Zener Diodes

SMD

SOT/SOD (LRC)

1. SC–79/ SOD–523 Surface Mount Zener Diodes 2. SC–76/ SOD–323 Surface Mount Zener Diodes 3 SOD–123 Surface Mount Zener Diodes 4. SOT–23/ TO–236AB Surface Mount Zener Diodes 5. SOT–23/ TO–236AB 24 WATTS Surface Mount Zener Diodes

ESD Protection

General Purpose Transistors

Bias Resistor Transistors

Transistors

Switching Transistors

1. SOT–723 Surface Mount General Purpose Transistors 2. SC–89 Surface Mount General Purpose Transistors 3. SC–70/ SOT–323 Surface Mount General Purpose Transistors 4. SOT–23/ TO–236AB Surface Mount General Purpose Transistors 5. SC–88/ SOT–363 Surface Mount General Purpose Transistors 6. SC–74 Surface Mount General Purpose Transistors

1. SOT–723 Surface Mount Bias Resistor Transistors 2. SC–89 Surface Mount Bias Resistor Transistors 3. SC–70/ SOT–323 Surface Mount Bias Resistor Transistors 4. SOT–23/ TO–236AB Surface Mount Bias Resistor Transistors 5. SC–88/ SOT–363 Surface Mount Dual Bias Resistor Transistors

1. SOD–923 General ESD/ TVS Devices 2. SOD– 723 General ESD/ TVS Devices 3. SC–79/ SOD–523 General ESD/ TVS Devices 4. SC–76/ SOD–323 General ESD/ TVS Devices 5. SOT–23/ TO–236AB General ESD/ TVS Devices 6. SOT–23/ TO–236AB General ESD/ TVS Devices 7. SOT–553 General ESD/ TVS Devices 8. SC–88A/ SOT–353 General ESD/ TVS Devices 9. SOT–563 General ESD/ TVS Devices 10. SC–88/ SOT–363 General ESD/ TVS Devices 11. SC–74 Quad Bidirectional Transil Suppressor for ESD Protection 12. SOD–323 Low Capacitance ESD/ TVS Devices 13. SOT–23/ TO–236AB Low Capacitance ESD/ TVS Devices 14. SOT–23–6 Low Capacitance ESD/ TVS Devices 15. SOP–8 Low Capacitance ESD/ TVS Devices 16. EMI +ESD Protection Devices

1. SC–89 Surface Mount General Purpose Switching Transistors 2. SC–70/ SOT–323 Surface Mount General Purpose Switching Transistors 3. SOT–23/ TO–236AB Surface Mount General Purpose Switching Transistors 4. SC–88/ SOT–363 Surface Mount General Purpose Switching Duals Transistors

1. SOT–323/ SC–70 Surface Mount MOS FETs 2. SOT–23/ TO–236AB Surface Mount MOS FETs 3. SC–88/ SOT–363 Surface Mount MOS FETs 4. SC–74 SOT–23–6 Surface Mount MOS FETs 5. SOP–8 Surface Mount Power MOS FETs 6. TSSOP–8 Surface Mount Power MOS FETs

Mosfets

1. SOD–923 Surface Mount Switching Diodes 2. SOD–723 Surface Mount Swithing Diodes 3. SC–79/ SOD–523 Surface Mount Switching Diodes 4. SC–76/ SOD–323 Surface Mount Switching Diodes 5. SC–76/ SOD–323 Surface Mount Band-Switching and PIN Diodes 6. SOD–123 Surface Mount Switching Diodes 7. SC–89 Surface Mount Switching Diodes 8. SC–70/ SOT–323 Surface Mount Switching Diodes 9. SOT–23/ TO–236AB Surface Mount Switching Diodes 10. SC–88/ SOT–363 Surface Mount Switching Diodes

IC

1. DC–DC 2. AC–DC 3. Amplifiers and Comparator 4. LED Driver 5. Voltage Reference 6. V–Detector/Reset 7. Charge Pump 8. Low Dropout Voltage Regulator 9. Dual Low Dropout Voltage Regulator 10. One–Gate Logic 10.1 CMOS input logic 10.2 CMOS input logic with Open Drain Output 10.3 CMOS/TTL input compatible logic 10.4 CMOS/TTL input compatible logic with Open Drain Output

Zener diodes

MINIMELF (GOOD-ARK)

Schottky diodes Fast switching rectifiers Bi-Directional trigger DIAC

SMA/B/C (GOOD-ARK)

SMA/B/C

Glass passivated high efficiency rectifiers Schottky barrier rectifiers Glass passivated super fast rectifiers Glass passivatedfast recovery rectifiers Glass passivated rectifiers Transient voltage suppressors

General purpose rectifiers Glass passivated rectifiers General purpose plastic rectifiers Fast recovery rectifiers Glass passivated fast recovery rectifiers Fast recovery rectifiers High efficiency rectifiers

Rectifier (GOOD-ARK)

Glass passivated high efficiency rectifiers High efficiency rectifiers

Rectifier

Suuper fast rectifiers

Leaded

Bridge Diode (LRC) Power Device (JSMC)

Bridge

1. 0.5A B1S-B10SS Series General Purpose Bridge Rectifiers 2. 1.0A DB/DBS Series Double-in-line Package General Purpose Bridge Rectifiers

Power device

Bipolar Power Transistor Diodes VDMOS Thyristor

Glass passivated super fast rectifiers Super fast rectifiers

3. 1.5-2.0A WOM Series General Purpose Bridge Rectifiers 4. 1.5-3.0A RB Series Single-in-line Package General Purpose Bridge Rectifiers 5. 2.0-4.0A GBL Series SIP Bridge Rectifiers 6. 4.0-15A GBU Series Single-in-line Package Bridge Rectifiers 7. 4.0-6.0A D3-4SB Series Single-in-line Package Bridge Rectifiers

Schottky barrier rectifiers Zener diodes Transient voltage suppressors Small signal diodes

8. 10-25A D10-25SB Series Single-in-line Package Bridge Rectifiers 9. 15A Series Square Bridge Rectifiers 10. 25-35A S25-35 Square Bridge Rectifiers 11. Square Bridge Rectifiers 12. Three-Phase Bridge Rectifiers

PESD (GOOD-ARK)

Leadless

PESD

Chip Diode (LIZ)

Chip Diode

QFN/DFN (GOOD-ARK)

QFN/DFN

Switching Diodes Zener Diodes Schottky Diodes

Fast switching rectifiers Schottky diodes High voltage rectifiers Electronics lamp ballasts rectifiers Power rectifiers Bi-Directional trigger Diac

本 土 的 品 牌， 世 界 級 的 品 質， 專 業 的 服 務 Local Brand, world-class Quality, Professional Service

SCHOTTKY DIODES 1. SOD–923 Surface Mount Schottky Diodes 2. SOD–723 Surface Mount Schottky Diodes 3. SC–79/ SOD–523 Surface Mount Schottky Diodes 4. SC–76/ SOD–323 Surface Mount Schottky Diodes

5. SOD–123 Surface Mount Schottky Diodes 6. SC–89 Surface Mount Schottky Diodes 7. SC–70/ SOT–323 Surface Mount Schottky Diodes 8. SOT–23/ TO–236AB Surface Mount Schottky Diodes 9. SC–88 Surface Mount Schottky Diodes

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SCHOTTKY DIODES 1. SOD–923 Surface Mount Schottky Diodes VR

Device Marking

Device LRB520CS-30T1G

E

30

LRB521CS-30T1G

F

30

LRB751CS-40T1G

5

30

VF@IF

IF (mA)

(V)

100

(V)

IR@VR (mA)

(uA)

(V)

0.45

100

100

0.35

100

10

10

30

0.37

1

0.5

30

0.5

10

1 1

2

2

STYLE

PACKAGE

2. SOD–723 Surface Mount Schottky Diodes Device

Device

VR

IF

Marking

(V)

(mA)

IR

VF Max (V)

IF (mA) 10

Max (µA) 0.5

VR (V) 10

LRB520G-30T1G

E

30

100

0.45

LRB521G-30T1G

F

30

100

0.35

10

10

10

LRB751G-40T1G

5

30

30

0.37

1

0.5

30

1 1

2

2

STYLE

PACKAGE

3. SC–79/ SOD–523 Surface Mount Schottky Diodes Device LRB520S-30T1G LRB521S-30T1G LRB751S-40T1G

VR (V)

Device Marking 5J 5M 5

VF

IF (mA)

30 30 40

200 200 30

1

1

IR IF (mA) 200 200 1.0

0.60 0.50 0.37

2

STYLE

Max (V)

Max (µA) 1.0 30 0.5

VR (V) 10 10 30

2

PACKAGE

If you want to get more information about product,welcome to call 0769-22026262 or email [email protected] www.dynasty-union.com

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4. SC–76/ SOD–323 Surface Mount Schottky Diodes Device

Device Marking

LBAT54HT1G LMDL301T1G LRB501V-40T1G LRB500V-40T1G

JV 4T

LRB751V-40T1G LRB551V-30T1G

5E D

4 5

200

30 30 40 40 30

IF (mA) 10 10 100 10

0.45 0.37

30 500

20

Max (V) 0.4 0.6 0.55

30 100 100

IR

VF

IF (mA)

VR (V)

1 100

0.36

Max (µA)

VR (V)

2 0.2 3

25 25 10

1 0.5 100

10 30 20

1 1

2

2

STYLE

PACKAGE

5. SOD–123 Surface Mount Schottky Diodes Device LMBR130T1G LMBR0520T1G LMBR0530T1G LMBR0540T1G LMSD301T1G LMSD701T1G LMSD103AT1G LMSD103BT1G LMSD103CT1G

VR

Device Marking S3 B2 B3 B4 XT XH S4 S5 S6

(V) 30 20 30 40 30 70 40 30 20

1000 500 500 500 200 200 350 350 350

IR

VF

IF (mA)

Max (V)

IF (mA) 100 500 500 500 1 1 200 200 200

0.35 0.385 0.43 0.51 0.45 0.5 0.6 0.6 0.6

Max (µA) 10 250 20 10 0.2 0.2 5 5 5

VR (V) 5 20 15 20 25 35 30 30 30

1 1

2

STYLE

2

PACKAGE

If you want to get more information about product,welcome to call 0769-22026262 or email [email protected] www.dynasty-union.com

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6. SC–89 Surface Mount Schottky Diodes Device LRB715WT1G

3D

IF

VR (V)

Device Marking 40

(mA) 30

IR

VF Max (V) 0.37

IF (mA) 1

Max (µA) 1.0

VF (V) 10

Style A

3

STYLE

(A)

(B)

(C)

(D)

(E)

(F)

3 1

1

2

2

PACKAGE

7. SC–70/ SOT–323 Surface Mount Schottky Diodes VR (V)

Device Marking

Device

IF (mA)

IR

VF

B7 5C

30 30

200 200

LBAT54SWT1G B8 LBAT54WT1G B4 LRB706F-40T1G 3J

30 30 40

LRB715FT1G LRB717FT1G

40 40

200 200 30 30

0.4 0.4 0.37 0.37

10 10 1 1

2 2 1.0 1.0

25 25 10 10

C E C A

30

0.37

1

1.0

10

B

LBAT54AWT1G LBAT54CWT1G

3D 3E STYLE

(A)

(B)

(C)

(D)

IF (mA) 10 10

(E)

Max (µA)

Style

Max (V) 0.4 0.4

2 2

VF (V) 25 25

B A

3

(F)

3

2 1 1

2

PACKAGE

8. SOT–23/ TO–236AB Surface Mount Schottky Diodes Device Marking

Device

VR (V)

VF@IF

IF (mA)

(V)

IR@VR (mA)

(uA)

(V)

Style

LBAS40-05LT1G

45

200

40

0.38

1.0

0.2

30

A

LBAS70-05LT1G

EH

70

70

0.41

1.0

0.1

50

A

LRB425DLT1G

D3L

100

45

0.55

100

30

10

A

LRB491DLT1G

D2E

1000

25

0.45

1000

200

20

E

STYLE

(A)

(B)

(C)

(D)

(E)

(F)

3

3

2 1

2

1

PACKAGE

If you want to get more information about product,welcome to call 0769-22026262 or email [email protected] www.dynasty-union.com

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8.1 SOT–23/ TO–236AB Surface Mount Schottky Diodes Device Marking

Device

VR (V) 40

LBAS40LT1G B1 LBAS40–04LT1G CB

B6 5C JV3 LD3 4T D3E D3C D3L

70 30 30 30 30 30 20 40 40

STYLE

(A)

LBAT54ALT1G LBAT54CLT1G LBAT54LT1G LBAT54SLT1G LMBD301LT1G LRB411DLT1G LRB421LT1G LRB425LT1G

1 1 1 0

2 2

70 70

0 0

2 10 10 10 10 1.5 20 6 6

200 200 200 200 30 500 100 100 (B)

VF VR (V)

5 5

120 70

70 70

LBAS70–06LT1G GK LBAS70LT1G BE

Max (pF) 5

120 120

40 40

LBAS40–06LT1G L2 LBAS70–04LT1G CG

CT

IF (mA)

1 1 1 1 15 10 10 10

(C)

(D)

Max (V) 0.5

IR

IF (mA) 30 30

0.5 0.5

Max (µA) 1 1 1

30 10

0.75 0.75

Style E C B C B

50 50 25 25 25 25 25 10 10 10

0.1 2 2 2 2 2 30 30 30

10 10 10 10 10 500 10 10

(E)

25 50

0.1 0.1

10 10

0.75 0.4 0.4 0.4 0.4 0.6 0.5 0.34 0.34

VR (V) 25 25

E B A E C E E E A

3

(F)

3

2 1

2

1

PACKAGE

9. SC–88 Surface Mount Schottky Diodes Device Marking

Device

VF@IF

IF

VR (V)

(V)

(mA)

IR@VR (mA)

(uA)

(V)

LBAT54DW1T1G

KLD

30

200

1.0

100

2.0

25

LBAT54SDW1T1G

KL8

30

200

1.0

100

2.0

25

4 6

5

4

6

5

4

1

2

3

1

2

3

5 6 3 2 1

STYLE

PACKAGE

If you want to get more information about product,welcome to call 0769-22026262 or email [email protected] www.dynasty-union.com

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SWITCHING DIODES 1. 2. 3. 4.

　

SOD– 923 Surface Mount Switching Diodes SOD–723 Surface Mount Swithing Diodes SC–79/ SOD–523 Surface Mount Switching Diodes SC–76/ SOD–323 Surface Mount Switching Diodes

5. SC–76/ SOD–323 Surface Mount Band-Switching and PIN Diodes 6. SOD–123 Surface Mount Switching Diodes 7. SC–89 Surface Mount Switching Diodes 8. SC–70/ SOT–323 Surface Mount Switching Diodes 9. SOT–23/ TO–236AB Surface Mount Switching Diodes 10. SC–88/ SOT–363 Surface Mount Switching Diodes

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SWITCHING DIODES

1. SOD– 923 Surface Mount Switching Diodes Device

VR (V)

Device Marking

L1SS400CST1G 3

IF (mA)

80

VF@IF (V)

100

(mA)

1.2

trr

IR@VR (uA)

100

(V)

0.1

(ns)

80

4.0

1 1

2

2

STYLE

PACKAGE

2. SOD–723 Surface Mount Swithing Diodes Device

VR (V)

Device Marking

L1SS400GT1G 3

VF

IF (mA)

Max (V)

100

80

1.2

IR Max (µA) 0.1

IF (mA) 100

VR (V) 80

1 1

2

2

STYLE

PACKAGE

3. SC–79/ SOD–523 Surface Mount Switching Diodes Device

Device Marking

IF (mA)

VR (V)

IR

VF Max (µA) 0.1

VR (V) 80

4.0

1.0

75

4.0

L1SS400T1G

A

90

100

LBAS516T1G

6

75

250

1.25

150

1

2

1

2

STYLE

trr (ns)

IF (mA) 100

Max (V) 1.2

PACKAGE

If you want to get more information about product,welcome to call 0769-22026262 or email [email protected] www.dynasty-union.com

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4. SC–76/ SOD–323 Surface Mount Switching Diodes Device Marking

Device L1SS355T1G LBAS16HT1G LBAS20HT1G LBAS21HT1G LMDL914T1G LMDL6050T1G

5D A6 JR JS 5D 5A

VR (V) 80 75 200 250 100 70

IR (µA)

(mA)

– 100 100 100 100 100

IR

VF (V)

IF

100 200 200 200 200 200

Max (µA)

1.2 1.25 1.25 1.25 1.0 1.1

0.1 1.0 0.1 0.1 5.0 0.1

VR (V) 80 75 150 200 75 50

CD ( f = 1.0MHz) Max VR (pF) (V) 3 2.0 5.0 5.0 4.0 2.5

0.5 0 0 0 0 0

trr Max (ns) 4 6.0 50 50 4.0 4.0

1 1

2

2

STYLE

PACKAGE

5. SC–76/ SOD–323 Surface Mount Band-Switching and PIN Diodes Device L1SS356T1G

Device Marking B

VR (V) 35

CD (f =1.0MHz) typ Max VR (pF) (pF) (V) – 1.2 6

IR

IF

Max (µA) 0.01

(mA) 100

VR (V) 25

rD(f =100MHz) Max IF (Ω) (mA) 0.9 2

1 1

2

2

PACKAGE

STYLE

6. SOD–123 Surface Mount Switching Diodes Device L1N4148WT1G

Device Marking T4

VR (V) 75

IR

VF

IF (mA)

IF (mA) 150

Max (V) 1.25

150

Max (µA) 50

VR (V) 75

trr (ns) 4

1 1

2

STYLE

2

PACKAGE

If you want to get more information about product,welcome to call 0769-22026262 or email [email protected] www.dynasty-union.com

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7. SC–89 Surface Mount Switching Diodes Device LBAS16TT1G LDAN222T1G

Device Marking

(V)

IF (mA)

A6 N

75 80

200 100

VR

VF Max (V) 1.25 1.2

IR

IF (mA) 150 100

Max (µA) 1.0 0.1

trr (ns)

VR (V) 75 70

6.0 4.0

Style E A

3

STYLE

(A)

(B)

(C)

(D)

(E)

(F)

3 2

1

1

2

PACKAGE

8. SC–70/ SOT–323 Surface Mount Switching Diodes VF

IR

Device Marking

VR (V)

(mA)

LBAS16WT1G LBAV70WT1G

A6 A4

75 70

200 200

1.25 1.0

150 50

0.02 5.0

20 70

6.0 6.0

E A

LBAV99WT1G LBAW56WT1G LDAN202UT1G

A7 A1 N

70 70 80

215 200 100

1.0 1.25 1.2

50 150 100

2.5 2.5 0.1

70 70 70

6.0 6.0 4.0

C B A

Device

IF Max (V)

IF (mA)

Max (µA)

trr (ns)

VR (V)

Style

LM1MA142KT1G

MI

80

100

1.2

100

0.1

75

3.0

E

LM1MA142WAT1G

MO

80

150

1.2

100

0.1

75

10

B

LM1MA141WKT1G MT

40

150

1.2

100

0.1

35

3.0

A

LM1MA142WKT1G MU

80

150

1.2

100

0.1

75

3.0

A

LM1MA141KT1G LM1MA141WAT1G LMBD7000WT1G

40 40 100

100 100 200

1.2 1.2 1.1

100 100 100

0.1 0.1 1.0

35 35 50

3.0 10 4.0

E B D

MH MN M5C

STYLE

(A)

(B)

(C)

(D)

(E)

(F)

3

3

2 1

2

1

PACKAGE

If you want to get more information about product,welcome to call 0769-22026262 or email [email protected] www.dynasty-union.com

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9. SOT–23/ TO–236AB Surface Mount Switching Diodes Device Marking

Device L1SS181LT1G L1SS226LT1G L1SS184LT1G LBAL99LT1G LBAS16LT1G LBAS20LT1G LBAS21CLT1G LBAS21LT1G LBAS21SLT1G LBAV70LT1G LBAV74LT1G LBAV99LT1G LBAW56LT1G LDAN217LT1G LMBD2836LT1G LMBD2838LT1G LMBD3004SLT1G LMBD6050LT1G LMBD6100LT1G LMBD7000LT1G LMBD914LT1G

A3 C3 B3 JF A6 JR JS3 JS JT A4 JA A7 A1 BA A2 MA6 KAE 5A 5BM M5C 5D

STYLE

(A)

V(BR)R Min IR (V) (µA) 80 – 80 – 80 100 70 – 75 100 200 – 250 – 250 100 250 100 70 100 50 5 70 100 70 100 80 – 75 100 75 100 350 100 70 100 70 100 100 100 100 100 (B)

(C)

IF (mA) 100 100 100 100 200 200 200 200 225 200 200 215 200 100 100 100 225 200 200 200 200 (D)

IR

VF Max (V) 0.71 0.71 1.2 1.25 1 1.25 1.25 1 1 1 1.1 1 1 1.2 1 1 1.25 1.1 1.1 1.1 1 (E)

IF (mA) 10 10 100 150 50 200 200 100 100 50 100 50 50 100 10 10 200 100 100 100 10 (F)

Max (µA) 0.5 0.5 0.5 2.5 1 0.1 1 0.1 0.1 5 0.1 2.5 2.5 0.1 0.1 0.1 0.1 0.1 0.1 1 5

VR (V) 80 80 80 70 75 150 200 200 200 70 50 70 70 70 50 50 240 50 50 50 75

trr (ns) 4 4 50 6 6 50 50 50 50 6 4 4 6 4 4 4 50 4 4 4 4

Style B C E F E E A E C A A C B C B A C E A C E

3

3

2 1

2

1

PACKAGE

If you want to get more information about product,welcome to call 0769-22026262 or email [email protected] www.dynasty-union.com

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10. SC–88/ SOT–363 Surface Mount Switching Diodes Device

VR

Device Marking

LBAS16TW1T1G KA2 LHN2D01FUDW1T1G A1

IF (mA)

(V) 75 80

300 100

VF Max (V) 1.25 1.2

IR

IF (mA) 150 100

Max (µA) 50 0.5

trr (ns)

VR (V) 75 80

4 4

4 6

5

4

1

2

3

5 6 3 2 1

STYLE

PACKAGE

If you want to get more information about product,welcome to call 0769-22026262 or email [email protected] www.dynasty-union.com

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ZENER DIODES

　

1. SC–79/ SOD–523 Surface Mount Zener Diodes 2. SC–76/ SOD–323 Surface Mount Zener Diodes 3. SOD–123 Surface Mount Zener Diodes 4. SOT–23/ TO–236AB Surface Mount Zener Diodes 5. SOT–23/ TO–236AB 24 WATTS Surface Mount Zener Diodes

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ZENER DIODES

1. SC–79/ SOD–523 Surface Mount Zener Diodes ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types)

Device LM5Z2V4T1G LM5Z2V7T1G LM5Z3V0T1G LM5Z3V3T1G LM5Z3V6T1G LM5Z3V9T1G LM5Z4V3T1G LM5Z4V7T1G LM5Z5V1T1G LM5Z5V6T1G LM5Z6V2T1G LM5Z6V8T1G LM5Z7V5T1G LM5Z8V2T1G LM5Z9V1T1G LM5Z10VT1G LM5Z11VT1G LM5Z12VT1G LM5Z13VT1G

Device Marking 00 01 02 05 06 07 08 09 0A 0C 0E 0F 0G 0H 0K 0L 0M 0N 0P

Zener voltage(Note 1) VZ(V) @IZT Min. Nom Max. mA 2.2 2.4 2.6 5 2.5 2.7 2.9 5 2.8 3.0 3.2 5 3.1 3.3 3.5 5 3.4 3.6 3.8 5 3.7 3.9 4.1 5 4.0 4.3 4.6 5 4.4 4.7 5.0 5 4.8 5.1 5.4 5 5.2 5.6 6.0 5 5.8 6.2 6.6 5 6.4 6.8 7.2 5 7.0 7.5 7.9 5 7.7 8.2 8.7 5 8.5 9.1 9.6 5 9.4 10 10.6 5 10.4 11 11.6 5 11.4 12 12.7 5 12.4 13.25 14.1 5

Zener Impedance Leakage Current ZZT@IZT ZZK@IZK IR@VR mA µA V Ω Ω 100 1000 1.0 50 1.0 100 1000 1.0 20 1.0 100 1000 1.0 10 1.0 95 1000 1.0 5 1.0 90 1000 1.0 5 1.0 90 1000 1.0 3 1.0 90 1000 1.0 3 1.0 80 800 1.0 3 2.0 60 500 1.0 2 2.0 40 400 1.0 1 2.0 10 100 1.0 3 4.0 15 160 1.0 2 4.0 15 160 1.0 1 5.0 15 160 1.0 0.7 5.0 15 160 1.0 0.2 7.0 20 160 1.0 0.1 8.0 20 160 1.0 0.1 8.0 25 80 1.0 0.1 8.0 30 80 1.0 0.1 8.0

Note 1. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

ΘVZ(mV/k) @IZK Min. Max. -3.5 0 -3.5 0 -3.5 0 -3.5 0 -3.5 0 -3.5 -2.5 -3.5 0 -3.5 0.2 -2.7 1.2 -2.0 2.5 0.4 3.7 1.2 4.5 2.5 5.3 3.2 6.2 3.8 7.0 4.5 8.0 5.4 9.0 6.0 10 7.0 11

1 1

C @VR=0 f=1MHz pF 450 450 450 450 450 450 450 260 225 200 185 155 140 135 130 130 130 130 120

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2

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1.1 SC–79/ SOD–523 Surface Mount Zener Diodes ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types)

Device LM5Z15VT1G LM5Z16VT1G LM5Z18VT1G LM5Z20VT1G LM5Z22VT1G LM5Z24VT1G LM5Z27VT1G LM5Z30VT1G LM5Z33VT1G LM5Z36VT1G LM5Z39VT1G LM5Z43VT1G LM5Z47VT1G LM5Z51VT1G LM5Z56VT1G LM5Z62VT1G LM5Z68VT1G LM5Z75VT1G

Device Marking 0T 0U 0W 0Z 10 11 12 14 18 19 20 21 1A 1C 1D 1E 1F 1G

Zener voltage(Note 1) VZ(V) @IZT Min. Nom Max. mA 14.3 15 15.8 5 15.3 16.2 17.1 2 16.8 18 19.1 2 18.8 20 21.2 2 20.8 22 23.3 2 22.8 24.2 25.6 2 25.1 27 28.9 2 28 30 32 2 31 33 35 2 34 36 38 2 37 39 41 2 40 43 46 1 44 47 50 1 48 51 54 1 52 56 60 1 58 62 66 1 64 68 72 1 70 75 79 1

Zener Impedance Leakage Current ΘVZ(mV/k) C @VR=0 ZZT@IZT ZZK@IZK IR@VR @IZK f=1MHz pF mA µA V Min. Max. Ω Ω 30 200 1.0 0.05 10.5 9.2 13 110 40 200 1.0 0.05 11.2 10.4 14 105 45 225 1.0 0.05 12.6 12.4 16 100 55 225 1.0 0.05 14.0 14.4 18 85 0.05 15.4 16.4 20 85 55 250 1.0 70 120 1.0 0.05 16.8 18.4 22 80 80 300 1.0 0.05 18.9 21.4 25.3 70 80 300 1.0 0.05 21.0 24.4 29.4 70 80 300 1.0 0.05 23.2 27.4 33.4 70 90 500 1.0 0.05 25.2 30.4 37.4 70 130 500 1.0 0.05 27.3 33.4 41.2 45 150 500 1.0 0.05 30.1 37.6 46.6 40 170 500 1.0 0.05 32.9 42.0 51.8 40 180 500 1.0 0.05 35.7 46.6 57.2 40 200 500 1.0 0.05 39.2 52.2 63.8 40 215 500 1.0 0.05 43.4 58.8 71.6 35 240 500 1.0 0.05 47.6 65.6 79.8 35 255 500 1.0 0.05 52.5 73.4 88.6 35

Note 1. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

1 1

2

2

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1.2 SC–79/ SOD–523 Surface Mount Zener Diodes ELECTRICAL CHARACTERISTICS (TA = 25°C )

Device LEDZ2.4BT1G LEDZ2.7BT1G LEDZ3.0BT1G LEDZ3.3BT1G LEDZ3.6BT1G LEDZ3.9BT1G LEDZ4.3BT1G LEDZ4.7BT1G LEDZ5.1BT1G LEDZ5.6BT1G LEDZ6.2BT1G LEDZ6.8BT1G LEDZ7.5BT1G LEDZ8.2BT1G LEDZ9.1BT1G LEDZ10BT1G LEDZ11BT1G LEDZ12BT1G LEDZ13BT1G LEDZ15BT1G LEDZ16BT1G LEDZ18BT1G LEDZ20BT1G LEDZ22BT1G LEDZ24BT1G LEDZ27BT1G LEDZ30BT1G LEDZ33BT1G LEDZ36BT1G

Device Marking 22 32 42 52 62 72 82 92 A2 C2 E2 F2 H2 J2 L2 05 15 25 35 45 55 65 75 85 95 A5 C5 E5 F5

Zener Voltage Vz(V) Min. Max. IZ(mA) 2.43 2.63 5.0 2.69 2.91 5.0 3.01 3.22 5.0 3.32 3.53 5.0 3.600 3.845 5.0 3.890 4.160 5.0 4.170 4.430 5.0 4.550 4.750 5.0 4.980 5.200 5.0 5.490 5.730 5.0 6.060 6.330 5.0 6.650 6.930 5.0 7.280 7.600 5.0 8.020 8.360 5.0 8.850 9.230 5.0 9.770 10.210 5.0 10.760 11.220 5.0 11.740 12.240 5.0 12.910 13.490 5.0 14.340 14.980 5.0 15.850 16.510 5.0 17.560 18.350 5.0 19.520 20.390 5.0 21.540 22.470 5.0 23.720 24.780 5.0 26.190 27.530 2.0 29.190 30.690 2.0 32.150 33.790 2.0 35.070 36.870 2.0

Operating Resistance Zz(Ω ) Max. IZ(mA) 100 5.0 110 5.0 120 5.0 120 5.0 100 5.0 100 5.0 100 5.0 100 5.0 80 5.0 60 5.0 60 5.0 40 5.0 30 5.0 30 5.0 30 5.0 30 5.0 30 5.0 30 5.0 37 5.0 42 5.0 50 5.0 65 5.0 85 5.0 100 5.0 120 5.0 150 2.0 200 2.0 250 2.0 300 2.0

Rising Operating Resistance Zz(Ω ) Max. IZ(mA) 1000.0 0.5 1000.0 0.5 1000.0 0.5 1000.0 0.5 1000.0 1.0 1000.0 1.0 1000.0 1.0 800.0 0.5 500.0 0.5 200.0 0.5 100.0 0.5 60.0 0.5 60.0 0.5 60.0 0.5 60.0 0.5 60.0 0.5 60.0 0.5 80.0 0.5 80.0 0.5 80.0 0.5 80.0 0.5 80.0 0.5 100.0 0.5 100.0 0.5 120.0 0.5 150.0 0.5 200.0 0.5 250.0 0.5 300.0 0.5

Note 1. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

Reverse Current IR(uA) Max. VR(V) 100 1.0 100 1.0 50 1.0 20 1.0 10.0 1.0 5.0 1.0 5.0 1.0 2.0 1.0 2.0 1.5 1.0 2.5 1.0 3.0 0.5 3.5 0.5 4.0 0.5 5.0 0.5 6.0 0.1 7.0 0.1 8.0 0.1 9.0 0.1 10.0 0.1 11.0 0.1 12.0 0.1 13.0 0.1 15.0 0.1 17.0 0.1 19.0 0.1 21.0 0.1 23.0 0.1 25.0 0.1 27.0

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2. SC–76/ SOD–323 Surface Mount Zener Diodes ( T A = 25°C unless otherwise notde, V F = 0.9V Max @ I F= 10mA for all types )

LM3Z2V4T1G LM3Z2V7T1G LM3Z3V0T1G LM3Z3V3T1G LM3Z3V6T1G

00 01 02 05 06

Zener Voltage(Note 1) VZ (V) @IZT Min Nom Max (mA) 2.2 2.4 2.6 5 2.5 2.7 2.9 5 2.8 3.0 3.2 5 3.1 3.3 3.5 5 3.4 3.6 3.8 5

LM3Z3V9T1G LM3Z4V3T1G LM3Z4V7T1G LM3Z5V1T1G

07 08 09 0A

3.7 4.0 4.4 4.8

Device

Device Marking

3.9 4.3 4.7 5.1

4.1 4.6 5.0 5.4

5 5 5 5

Zener Impedance ZZT@IZT ZZK@IZK (Ω) (Ω) 100 1000 100 1000 100 1000 95 1000 90 1000

Leakage Current IR@VR IZK (V) (mA) (µA) 0.5 50 1.0 0.5 20 1.0 0.5 10 1.0 0.5 5 1.0 0.5 5 1.0

90 90 80 60

0.5 0.5 0.5 0.5

1000 1000 800 800

3 3 3 2

1.0 1.0 2.0 2.0

Note 1. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

ΘVZ(mV/k) @IZT Min Max -3.5 0 -3.5 0 -3.5 0 -3.5 0

450 450 450 450

-3.5 -3.5 -3.5 -3.5 -2.7

450 450 450 260 225

0 -2.5 0 0.2 1.2

C@VR =0 f=1MHz (pF)

1 1

2

2

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2.1 SC–76/ SOD–323 Surface Mount Zener Diodes ( T A = 25°C unless otherwise notde, V F = 0.9V Max @ I F= 10mA for all types )

ΘVZ(mV/k) @IZT Min Max

LM3Z5V6T1G 0C LM3Z6V2T1G 0E LM3Z6V8T1G 0F

Zener Voltage(Note 1) VZ (V) @IZT Min Nom Max (mA) 5.2 5.6 6.0 5 5.8 6.2 6.6 5 6.4 6.8 7.2 5

Zener Impedance ZZT@IZT ZZK@IZK (Ω) (Ω) 40 700 10 100 15 160

Leakage Current IR@VR IZK (V) (mA) (µA) 0.5 1 2.0 0.5 3 4.0 0.5 2 4.0

-2.0 0.4 1.2

2.5 3.7 4.5

200 185 155

LM3Z7V5T1G 0G LM3Z8V2T1G 0H

7.0 7.5 7.7 8.2

7.9 8.7

5 5

15 15

160 160

0.5 0.5

1 0.7

5.0 5.0

2.5 3.2

5.3 6.2

140 135

LM3Z9V1T1G 0K LM3Z10VT1G 0L LM3Z11VT1G 0M

8.5 9.1 9.4 10 10.4 11

9.6 5 10.6 5 11.6 5

15 20 20

160 160 160

0.5 0.5 0.5

0.2 0.1 0.1

7.0 8.0 8.0

3.8 4.5 5.4

7.0 8.0 9.0

130 130 130

LM3Z12VT1G 0N LM3Z13VT1G 0P LM3Z15VT1G 0T

11.4 12 12.7 5 12.4 13.25 14.1 5 14.3 15 15.8 5

25 30 30

80 80 400

0.5 0.5 0.5

0.1 0.1 0.05

8.0 8.0 10.5

6.0 7.0 9.2

10 11 13

130 120 110

LM3Z16VT1G 0U LM3Z18VT1G 0W LM3Z20VT1G 0Z

15.3 16.2 17.1 5 16.8 18 19.1 5 18.8 20 21.2 5

40 45 55

400 400 500

0.5 0.5 0.5

0.05 0.05 0.05

11.2 12.6 14.0

10.4 12.4 14.4

14 16 18

105 100 85

LM3Z22VT1G 10 LM3Z24VT1G 11 LM3Z27VT1G 12

20.8 22 23.3 5 22.8 24.2 25.6 5 25.1 27 28.9 2

55 70 80

500 120 300

0.5 0.5 0.5

0.05 0.05 0.05

15.4 16.8 18.9

16.4 18.4 21.4

20 85 22 80 25.3 70

LM3Z30VT1G LM3Z33VT1G LM3Z36VT1G LM3Z39VT1G

28.0 31.0 34 37

30 33 36 39

32 35 38 41

2 2 2 2

80 80 90 130

300 300 500 500

0.5 0.5 0.5 0.5

0.05 0.05 0.05 0.05

21.0 23.2 25.2 27.3

24.4 27.4 30.4 33.4

29.4 33.4 37.4 41.2

LM3Z43VT1G 21 LM3Z47VT1G 1A

40 44

43 47

46 50

2 2

150 170

500 500

0.5 0.5

0.05 0.05

30.1 32.9

37.6 42.0

46.6 40 51.8 40

LM3Z51VT1G LM3Z56VT1G LM3Z62VT1G LM3Z68VT1G LM3Z75VT1G

48 52 58 64 70

51 56 62 68 75

54 60 66 72 79

2 2 2 2 2

180 200 215 240 255

500 500 500 500 500

0.5 0.5 0.5 0.5 0.5

0.05 0.05 0.05 0.05 0.05

35.7 39.2 43.4 47.6 52.5

46.6 52.2 58.8 65.6 73.4

57.2 63.8 71.6 79.8 88.6

Device

Device Marking

14 18 19 20

1C 1D 1E 1F 1G

Note 1. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

C@VR =0 f=1MHz (pF)

70 70 70 45

40 40 35 35 35

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2

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2.2 SC–76/ SOD–323 Surface Mount Zener Diodes ELECTRICAL CHARACTERISTICS ( TA = 25°C )

Zener voltage Device LUDZS2.0BT1G LUDZS2.2BT1G LUDZS2.4BT1G LUDZS2.7BT1G LUDZS3.0BT1G LUDZS3.3BT1G LUDZS3.6BT1G LUDZS3.9BT1G LUDZS4.3BT1G LUDZS4.7BT1G LUDZS5.1BT1G LUDZS5.6BT1G LUDZS6.2BT1G LUDZS6.8BT1G LUDZS7.5BT1G LUDZS8.2BT1G LUDZS9.1BT1G LUDZS10BT1G LUDZS11BT1G LUDZS12BT1G LUDZS13BT1G LUDZS15BT1G LUDZS16BT1G LUDZS18BT1G LUDZS20BT1G LUDZS22BT1G LUDZS24BT1G LUDZS27BT1G LUDZS30BT1G LUDZS33BT1G LUDZS36BT1G

Device Marking 02 12 22 32 42 52 62 72 82 92 A2 C2 E2 F2 H2 J2 L2 05 15 25 35 45 55 65 75 85 95 A5 C5 E5 F5

Min. 2.020 2.220 2.430 2.690 3.010 3.320 3.600 3.890 4.170 4.550 4.980 5.490 6.060 6.650 7.280 8.020 8.850 9.770 10.760 11.740 12.910 14.340 15.850 17.560 19.520 21.540 23.720 26.190 29.190 32.150 35.070

VZ(V) Max. 2.200 2.410 2.630 2.910 3.220 3.530 3.845 4.160 4.430 4.750 5.200 5.730 6.330 6.930 7.600 8.360 9.230 10.210 11.220 12.240 13.490 14.980 16.510 18.350 20.390 22.470 24.780 27.530 30.690 33.790 36.870

IZ(mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5

Operating resistance ZZ(Ω) Max. IZ(mA) 100 5 100 5 100 5 110 5 120 5 120 5 100 5 100 5 100 5 100 5 80 5 60 5 60 5 40 5 30 5 30 5 30 5 30 5 30 5 30 5 37 5 42 5 50 5 65 5 85 5 100 5 120 5 150 5 200 5 250 5 300 5

Note 1. The Zener voltage (Vz) is measured 40ms after power is supplied. 2. The operating resistances (Zz, Zzk) are measured by superimposing a minute alternating current on the regulated current (Iz).

Rising operating resistance ZZK(Ω) Max. IZ(mA) 1000 0.5 1000 0.5 1000 0.5 1000 0.5 1000 0.5 1000 0.5 1000 1.0 1000 1.0 1000 1.0 800 0.5 500 0.5 200 0.5 100 0.5 60 0.5 60 0.5 60 0.5 60 0.5 60 0.5 60 0.5 80 0.5 80 0.5 80 0.5 80 0.5 80 0.5 100 0.5 100 0.5 120 0.5 150 0.5 200 0.5 250 0.5 300 0.5

Reverse curre IR(µA) Max. VR(V) 120 0.5 120 0.7 100 1.0 100 1.0 50 1.0 20 1.0 10 1.0 5 1.0 5 1.0 2 1.0 2 1.5 1 2.5 1 3.0 0.5 3.5 0.5 4.0 0.5 5.0 0.5 6.0 0.1 7.0 0.1 8.0 0.1 9.0 0.1 10.0 0.1 11.0 0.1 12.0 0.1 13.0 0.1 15.0 0.1 17.0 0.1 19.0 0.1 21.0 0.1 23.0 0.1 25.0 0.1 27.0

1 1

2

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2

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3 SOD–123 Surface Mount Zener Diodes ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted )

Device LBZT52C2V4T1G LBZT52C2V7T1G LBZT52C3V0T1G LBZT52C3V3T1G LBZT52C3V6T1G LBZT52C3V9T1G LBZT52C4V3T1G LBZT52C4V7T1G LBZT52C5V1T1G LBZT52C5V6T1G LBZT52C6V2T1G LBZT52C6V8T1G LBZT52C7V5T1G LBZT52C8V2T1G LBZT52C9V1T1G LBZT52C10T1G LBZT52C11T1G LBZT52C12T1G LBZT52C13T1G LBZT52C15T1G LBZT52C16T1G LBZT52C18T1G LBZT52C20T1G LBZT52C22T1G LBZT52C24T1G

Device Marking

WX W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO

Zener Voltage Range(1) VZ @ IZT (V) @ IZT Nom Min Max mA

2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24

2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8

2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.8 17.1 19.1 21.2 23.3 25.6

5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5

Maximum Zener Maximum Reverse Tpical Temperature Test Impedance(3) Current Tpical Coefficent Current ZZT@ZT ZZK@IZK IZK IR @VR @IZT mV/°C IZTC mA µA Ω Ω V Min Max mA

100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70

600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250

1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0

50 20 10 5.0 5.0 3.0 3.0 3.0 2.0 1.0 3.0 2.0 1.0 0.7 0.5 0.2 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1

1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 4.0 4.0 5.0 5.0 6.0 7.0 8.0 8.0 8.0 10.5 11.2 12.6 14.0 15.4 16.8

-3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -2.7 -2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4

0 0 0 0 0 0 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0

5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5

1 1

2

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2

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3.1 SOD–123 Surface Mount Zener Diodes ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted )

Device LBZT52C27T1G LBZT52C30T1G LBZT52C33T1G LBZT52C36T1G LBZT52C39T1G LBZT52C43T1G LBZT52C47T1G LBZT52C51T1G

Device Marking

WP WQ WR WS WT WU WV WW

Zener Voltage Range(1) VZ @ IZT (V) @ IZT Nom Min Max mA

27 30 33 36 39 43 47 51

25.1 28.0 31.0 34.0 37.0 40.0 44.0 48.0

28.9 32 35 38 41 46 50 54

2 2 2 2 2 2 2 2

Maximum Reverse Tpical Temperature Test Maximum Zener Current Impedance(3) Tpical Coefficent Current ZZT@ZT ZZK@IZK IZK IR @VR @IZT mV/°C IZTC V Min Max Ω Ω mA µA mA

80 80 80 90 130 100 100 100

300 300 325 350 350 700 750 750

0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0

0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1

18.9 21.0 23.1 25.2 27.3 32.0 35.0 38.0

21.4 24.4 27.4 30.4 33.4 10.0 10.0 10.0

25.3 29.4 33.4 37.4 41.2 12.0 12.0 12.0

2 2 2 2 2 5 5 5

1 1

2

2

STYLE

PACKAGE

3.2 SOD–123 Surface Mount Zener Diodes ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)

Device LMSZ2V4T1G LMSZ2V7T1G LMSZ3V0T1G* LMSZ3V3T1G LMSZ3V6T1G LMSZ3V9T1G LMSZ4V3T1G LMSZ4V7T1G LMSZ5V1T1G

Device Marking

T1 T2 T3 T4 T5 U1 U2 U3 U4

VZ1(V) (Notes 1 and 2) @ IZT1 = 2mA Min Max Nom

2.28 2.57 2.85 3.14 3.42 3.71 4.09 4.47 4.85

2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1

2.52 2.84 3.15 3.47 3.78 4.10 4.52 4.94 5.36

ZZT1 (Note3) Ω

100 100 95 95 90 90 90 80 60

VZ1(V) (Notes 1 and 2) @ IZT2 = 0.1mA Min Max

ZZT2 (Note3) @IZT2=0.5mA Ω

1.7 1.9 2.1 2.3 2.7 2.9 3.3 3.7 4.2

600 600 600 600 600 600 600 500 480

Note: 1. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage. 2. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms. 3. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz. *Not Available in the 10,000/Tape & Reel.

2.1 2.4 2.7 2.9 3.3 3.5 4.0 4.7 5.3

Max Reverse Leakage Current I R @ VR V µA

50 20 10 5 5 3 3 3 2

1 1 1 1 1 1 1 2 2 1

1

2 2

STYLE

PACKAGE

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3.3 SOD–123 Surface Mount Zener Diodes ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)

Device LMSZ5V6T1G* LMSZ6V2T1G* LMSZ6V8T1G LMSZ7V5T1G LMSZ8V2T1G LMSZ9V1T1G LMSZ10T1G LMSZ11T1G LMSZ12T1G LMSZ13T1G LMSZ15T1G LMSZ16T1G LMSZ18T1G LMSZ20T1G LMSZ22T1G LMSZ24T1G LMSZ27T1G LMSZ30T1G* LMSZ33T1G LMSZ36T1G* LMSZ39T1G* LMSZ43T1G* LMSZ47T1G LMSZ51T1G* LMSZ56T1G

Device Marking

U5 V1 V2 V3 V4 V5 A1 A2 A3 A4 A5 X1 X2 X3 X4 X5 Y1 Y2 Y3 Y4 Y5 Z1 Z2 Z3 Z4

VZ1(V) (Notes 1 and 2) @ IZT1 = 5mA Min Nom Max

5.32 5.89 6.46 7.13 7.79 8.65 9.50 10.45 11.40 12.35 14.25 15.20 17.10 19.00 20.90 22.80 25.65 28.50 31.35 34.20 37.05 40.85 44.65 48.45 53.20

5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56

5.88 6.51 7.14 7.88 8.61 9.56 10.50 11.55 12.60 13.65 15.75 16.80 18.90 21.00 23.10 25.20 28.35 31.50 34.65 37.80 40.95 45.15 49.35 53.55 58.80

ZZT1 (Note3) Ω

40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130 150 170 180 200

VZ1(V) (Notes 1 and 2) @ IZT2 = 1mA Min Max

4.8 5.6 6.3 6.9 7.6 8.4 9.3 10.2 11.2 12.3 13.7 15.2 16.7 18.7 20.7 22.7 25 27.8 30.8 33.8 36.7 39.7 43.7 47.6 51.5

6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.0 15.5 17.0 19.0 21.1 23.2 25.5 28.9 32 35 38 41 46 50 54 60

Note: 1. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage. 2. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms. 1 3. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz. *Not Available in the 10,000/Tape & Reel.

ZZT2 (Note3) Ω

400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 300 300 325 350 350 375 375 400 425

Max Reverse Leakage Current I R @ VR V µA

1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05

2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14 15.4 16.8 18.9 21 23.1 25.2 27.3 30.1 32.9 35.7 39.2 1

2

STYLE

2

PACKAGE

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3.4 SOD–123 Surface Mount Zener Diodes ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)

Device LMSZ4684ET1G LMSZ4688ET1G LMSZ4689ET1G LMSZ4690ET1G LMSZ4691ET1G LMSZ4692ET1G LMSZ4693ET1G LMSZ4697ET1G LMSZ4699ET1G LMSZ4701ET1G LMSZ4702ET1G LMSZ4703ET1G LMSZ4705ET1G LMSZ4709ET1G LMSZ4711ET1G LMSZ4717ET1G LMSZ4678T1G LMSZ4679T1G LMSZ4680T1G LMSZ4681T1G LMSZ4682T1G LMSZ4683T1G LMSZ4684T1G LMSZ4685T1G LMSZ4686T1G LMSZ4687T1G LMSZ4688T1G LMSZ4689T1G

Device Marking

CG3 CG7 CG8 CG9 CH1 CH2 CH3 CH7 CH9 CJ2 CJ3 CJ4 CJ6 CK1 CK3 CK9 CC CD CE CF CH CJ CK CM CN CP CT CU

Min

3.13 4.47 4.85 5.32 5.89 6.46 7.13 9.50 11.40 13.3 14.25 15.20 17.10 22.80 25.65 40.85 1.71 1.90 2.09 2.28 2.565 2.85 3.13 3.42 3.70 4.09 4.47 4.85

Zener Voltage (Notes 1) VZ(V) Nom

3.3 4.7 5.1 5.6 6.2 6.8 7.5 10 12 14 15 16 18 24 27 43 1.8 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1

@ IZT µA

Max

3.47 4.94 5.36 5.88 6.51 7.14 7.88 10.50 12.60 14.7 15.75 16.80 18.90 25.20 28.35 45.15 1.89 2.10 2.31 2.52 2.835 3.15 3.47 3.78 4.10 4.52 4.94 5.36

50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50

Leakage Current IR @ VR V µA

7.5 10 10 10 10 10 10 1 0.05 0.05 0.05 0.05 0.05 0.01 0.01 0.01 7.5 5 4 2 1 0.8 7.5 7.5 5 4 10 10

1.5 3 3 4 5 5.1 5.7 7.6 9.1 10.6 11.4 12.1 13.6 18.2 20.4 32.6 1 1 1 1 1 1 1.5 2 2 2 3 3

1

Note: 1. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C.

1

2

STYLE

2

PACKAGE

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3.5 SOD–123 Surface Mount Zener Diodes ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)

Device

Device Marking Min

LMSZ4690T1G LMSZ4691T1G LMSZ4692T1G LMSZ4693T1G LMSZ4694T1G LMSZ4695T1G LMSZ4696T1G LMSZ4697T1G LMSZ4698T1G LMSZ4699T1G LMSZ4700T1G LMSZ4701T1G LMSZ4702T1G LMSZ4703T1G* LMSZ4704T1G LMSZ4705T1G LMSZ4706T1G LMSZ4707T1G LMSZ4708T1G LMSZ4709T1G LMSZ4710T1G LMSZ4711T1G* LMSZ4712T1G LMSZ4713T1G LMSZ4714T1G LMSZ4715T1G LMSZ4716T1G LMSZ4717T1G

CV CA CX CY CZ DC DD DE DF DH DJ DK DM DN DP DT DU DV DA DX DY EA EC ED EE EF EH EJ

5.32 5.89 6.46 7.13 7.79 8.27 8.65 9.50 10.45 11.40 12.35 13.30 14.25 15.20 16.15 17.10 18.05 19.00 20.90 22.80 23.75 25.65 26.60 28.50 31.35 34.20 37.05 40.85

Zener Voltage (Notes 1) VZ(V) Nom

5.6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43

Note: 1. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C. *LMSZ4703 and LMSZ4711 Not Available in 10,000/Tape & Reel

@ IZT µA

Max

5.88 6.51 7.14 7.88 8.61 9.14 9.56 10.50 11.55 12.60 13.65 14.70 15.75 16.80 17.85 18.90 19.95 21.00 23.10 25.20 26.25 28.35 29.40 31.50 34.65 37.80 40.95 45.15

50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50

Leakage Current IR @ VR V µA

10 10 10 10 1 1 1 1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01

4 5 5.1 5.7 6.2 6.6 6.9 7.6 8.4 9.1 9.8 10.6 11.4 12.1 12.9 13.6 14.4 15.2 16.7 18.2 19.0 20.4 21.2 22.8 25.0 27.3 29.6 32.6

1 1

2

STYLE

2

PACKAGE

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3.6 SOD–123 Surface Mount Zener Diodes ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)

Device LMSZ2V4ET1G LMSZ2V7ET1G LMSZ3V0ET1G LMSZ3V3ET1G LMSZ3V6ET1G LMSZ3V9ET1G LMSZ4V3ET1G LMSZ4V7ET1G LMSZ5V1ET1G LMSZ5V6ET1G LMSZ6V2ET1G LMSZ6V8ET1G LMSZ7V5ET1G LMSZ8V2ET1G LMSZ9V1ET1G LMSZ10ET1G LMSZ11ET1G LMSZ12ET1G LMSZ13ET1G LMSZ15ET1G LMSZ16ET1G LMSZ18ET1G LMSZ20ET1G LMSZ22ET1G LMSZ24ET1G LMSZ27ET1G LMSZ30ET1G LMSZ33ET1G

Device Marking

VZ1(V) (Notes 1 and 2) @ IZT1 = 5mA Min Nom Max

ZZT1 (Note3)

CL1 CL2 CL3 CL4 CL5 CL6 CL7 CL8 CL9 CM1 CM2 CM3 CM4 CM5 CM6 CM7 CM8 CM9 CN1 CN2 CN3 CN4 CN5 CN6 CN7 CN8 CN9 CP1

2.28 2.57 2.85 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.89 6.46 7.13 7.79 8.65 9.50 10.45 11.40 12.35 14.25 15.20 17.10 19.00 20.90 22.80 25.65 28.50 31.35

100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80

2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33

2.52 2.84 3.15 3.47 3.78 4.10 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.56 10.50 11.55 12.60 13.65 15.75 16.80 18.90 21.00 23.10 25.20 28.35 31.50 34.65

Ω

VZ1(V) (Notes 1 and 2) @ IZT2 = 1mA Min Max

1.7 1.9 2.1 2.3 2.7 2.9 3.3 3.7 4.2 4.8 5.6 6.3 6.9 7.6 8.4 9.3 10.2 11.2 12.3 13.7 15.2 16.7 18.7 20.7 22.7 25 27.8 30.8

Note: 1. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage. 2. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms. 3. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz.

2.1 2.4 2.7 2.9 3.3 3.5 4.0 4.7 5.3 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.0 15.5 17.0 19.0 21.1 23.2 25.5 28.9 32 35

ZZT2 (Note3) Ω

600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 300 300 325

Max Reverse Leakage Current I R @ VR V µA

50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05

1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14.0 15.4 16.8 18.9 21.0 23.0

1 1

2

STYLE

2

PACKAGE

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3.7 SOD–123 Surface Mount Zener Diodes ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)

Device LMSZ36ET1G LMSZ39ET1G LMSZ43ET1G LMSZ47ET1G LMSZ51ET1G LMSZ56ET1G

Device Marking

CP2 CP3 CP4 CP5 CP6 CP7

VZ1(V) (Notes 1 and 2) @ IZT1 = 2mA Min Nom Max

34.20 37.05 40.85 44.65 48.45 53.20

36 39 43 47 51 56

37.80 40.95 45.15 49.35 53.55 58.80

ZZT1 VZ1(V) (Note3) (Notes 1 and 2) @ IZT2 = 0.1mA Min Max Ω

90 130 150 170 180 200

33.8 36.7 39.7 43.7 47.6 51.5

Note: 1. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage. 2. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms. 3. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz.

38 41 46 50 54 60

ZZT2 (Note3) @IZT2=0.5mA Ω

350 350 375 375 400 425

Max Reverse Leakage Current I R @ VR V µA

0.05 0.05 0.05 0.05 0.05 0.05

25.2 27.3 30.1 32.9 35.7 39.2

1 1

2

STYLE

2

PACKAGE

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3.8 SOD–123 Surface Mount Zener Diodes ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)

Device LMSZ5221BT1G LMSZ5222BT1G LMSZ5223BT1G LMSZ5224BT1G LMSZ5225BT1G LMSZ5226BT1G LMSZ5227BT1G LMSZ5228BT1G LMSZ5229BT1G LMSZ5230BT1G LMSZ5231BT1G LMSZ5232BT1G LMSZ5233BT1G LMSZ5234BT1G LMSZ5235BT1G LMSZ5236BT1G LMSZ5237BT1G LMSZ5238BT1G LMSZ5239BT1G LMSZ5240BT1G LMSZ5241BT1G LMSZ5242BT1G LMSZ5243BT1G LMSZ5244BT1G LMSZ5245BT1G LMSZ5246BT1G LMSZ5247BT1G LMSZ5248BT1G

Device Marking

VZ1(V) (Notes 1 and 2) VZ(Vlots) Nom Min Max

C1 C2 C3 C4 C5 D1 D2 D3 D4 D5 E1 E2 E3 E4 E5 F1 F2 F3 F4 F5 H1 H2 H3 H4 H5 J1 J2 J3

2.28 2.38 2.57 2.66 2.85 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.70 5.89 6.46 7.13 7.79 8.27 8.65 9.50 10.45 11.40 12.35 13.30 14.25 15.20 16.15 17.10

2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18

2.52 2.63 2.84 2.94 3.15 3.47 3.78 4.10 4.52 4.94 5.36 5.88 6.30 6.51 7.14 7.88 8.61 9.14 9.56 10.50 11.55 12.60 13.65 14.70 15.75 16.80 17.85 18.90

@IZT mA

20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.4 7.0

Zener Impedance(Note3) ZZT@IZT ZZK@IZK mA Ω Ω

30 30 30 30 29 28 24 23 22 19 17 11 7 7 5 6 8 8 10 17 22 30 13 15 16 17 19 21

Note: 1. The type numbers shown have a standard tolerance of ±5% on the nominal Zener voltage. 2. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C. 3. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied. The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1KHz.

1200 1250 1300 1400 1600 1600 1700 1900 2000 1900 1600 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 600 600

0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25

Leakage Current IR @ VR V µA

100 100 75 75 50 25 15 10 5 5 5 5 5 5 3 3 3 3 3 3 2 1 0.5 0.1 0.1 0.1 0.1 0.1

1 1 1 1 1 1 1 1 1 2 2 3 3.5 4 5 6 6.5 6.5 7 8 8.4 9.1 9.9 10 11 12 13 14 1

1

2

STYLE

2

PACKAGE

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3.9 SOD–123 Surface Mount Zener Diodes ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)

Device LMSZ5250BT1G LMSZ5251BT1G LMSZ5252BT1G LMSZ5253BT1G LMSZ5254BT1G LMSZ5255BT1G LMSZ5256BT1G LMSZ5257BT1G LMSZ5258BT1G LMSZ5259BT1G LMSZ5260BT1G LMSZ5261BT1G LMSZ5262BT1G LMSZ5263BT1G LMSZ5264BT1G LMSZ5265BT1G LMSZ5266BT1G LMSZ5267BT1G LMSZ5268BT1G LMSZ5269BT1G LMSZ5270BT1G LMSZ5272BT1G

Device Marking

VZ1(V) (Notes 1 and 2) VZ(Vlots) Min Nom Max

J5 K1 K2 K3 K4 K5 M1 M2 M3 M4 M5 N1 N2 N3 N4 N5 P1 P2 P3 P4 P5 R2

19.00 20.90 22.80 23.75 25.65 26.60 28.50 31.35 34.20 37.05 40.85 44.65 48.45 53.20 57.00 58.90 64.60 71.25 77.90 82.65 86.45 104.5

20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 82 87 91 110

21.00 23.10 25.20 26.25 28.35 29.40 31.50 34.65 37.80 40.95 45.15 49.35 53.55 58.80 63.00 65.10 71.40 78.75 86.10 91.35 95.55 115.5

@IZT mA

6.2 5.6 5.2 5.0 4.6 4.5 4.2 3.8 3.4 3.2 3.0 2.7 2.5 2.2 2.1 2.0 1.8 1.7 1.5 1.4 1.4 1.1

Zener Impedance(Note3) ZZT@IZT ZZK@IZK mA Ω Ω

25 29 33 35 41 44 49 58 70 80 93 105 125 150 170 185 230 270 330 370 400 750

Note: 1. The type numbers shown have a standard tolerance of ±5% on the nominal Zener voltage. 2. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C. 3. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied. The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1KHz.

600 600 600 600 600 600 600 700 700 800 900 1000 1100 1300 1400 1400 1600 1700 2000 2200 2300 3000

0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25

Leakage Current IR @ VR V µA

0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1

15 17 18 19 21 21 23 25 27 30 33 36 39 43 46 47 52 56 62 68 69 84

1 1

2

STYLE

2

PACKAGE

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3.10 SOD–123 Surface Mount Zener Diodes ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)

Device LMSZ5221ET1G LMSZ5223ET1G LMSZ5226ET1G LMSZ5228ET1G LMSZ5229ET1G LMSZ5231ET1G LMSZ5232ET1G LMSZ5234ET1G LMSZ5235ET1G LMSZ5236ET1G LMSZ5237ET1G LMSZ5240ET1G LMSZ5242ET1G LMSZ5243ET1G LMSZ5244ET1G LMSZ5245ET1G LMSZ5246ET1G LMSZ5248ET1G LMSZ5250ET1G LMSZ5252ET1G LMSZ5253ET1G LMSZ5254ET1G LMSZ5255ET1G LMSZ5256ET1G LMSZ5257ET1G LMSZ5258ET1G LMSZ5259ET1G LMSZ5262ET1G LMSZ5263ET1G

Device Marking

VZ1(V) (Notes 1 and 2) VZ(Vlots) Min Nom Max

CA1 CA3 CA6 CA8 CA9 CB2 CB3 CB5 CB6 CB7 CB8 CC2 CC4 CC5 CC6 CC7 CC8 CD1 CD3 CD5 CD6 CD7 CD8 CD9 CE1 CE2 CE3 CE6 CE7

2.28 2.57 3.14 3.71 4.09 4.85 5.32 5.89 6.46 7.13 7.79 9.50 11.40 12.35 13.30 14.25 15.20 17.10 19.00 22.80 23.75 25.65 26.60 28.50 31.35 34.20 37.05 48.45 53.20

2.4 2.7 3.3 3.9 4.3 5.1 5.6 6.2 6.8 7.5 8.2 10 12 13 14 15 16 18 20 24 25 27 28 30 33 36 39 51 56

2.52 2.84 3.47 4.10 4.52 5.36 5.88 6.51 7.14 7.88 8.61 10.50 12.60 13.65 14.70 15.75 16.80 18.90 21.00 25.20 26.25 28.35 29.40 31.50 34.65 37.80 40.95 53.55 58.80

@IZT mA

20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.0 6.2 5.2 5.0 4.6 4.5 4.2 3.8 3.4 3.2 2.5 2.2

Zener Impedance(Note3) ZZK@IZK ZZT@IZT mA Ω Ω

30 30 28 23 22 17 11 7 5 6 8 17 30 13 15 16 17 21 25 33 35 41 44 49 58 70 80 125 150

Note: 1. The type numbers shown have a standard tolerance of ±5% on the nominal Zener voltage. 2. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C. 3. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied. The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1KHz.

1200 1300 1600 1900 2000 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 700 700 800 1100 1300

0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25

Leakage Current IR @ VR V µA

100 75 25 10 5 5 5 5 3 3 3 3 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1

1 1 1 1 1 2 3 4 5 6 6.5 8 9.1 9.9 10 11 12 14 15 18 19 21 21 23 25 27 30 39 43

1 1

2

STYLE

2

PACKAGE

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4. SOT–23/ TO–236AB Surface Mount Zener Diodes (VF = 0.9V Max @ IF =10mA for all types)

Device

Device Marking

LMBZ5223BLT1G LMBZ5225BLT1G LMBZ5226BLT1G LMBZ5227BLT1G LMBZ5228BLT1G LMBZ5229BLT1G

18C 18E 8A 8B 8C 8D

LMBZ5230BLT1G LMBZ5231BLT1G LMBZ5232BLT1G LMBZ5234BLT1G LMBZ5235BLT1G LMBZ5237BLT1G LMBZ5239BLT1G LMBZ5240BLT1G LMBZ5241BLT1G LMBZ5242BLT1G LMBZ5243BLT1G LMBZ5245BLT1G LMBZ5246BLT1G LMBZ5247BLT1G LMBZ5248BLT1G LMBZ5249BLT1G LMBZ5250BLT1G LMBZ5251BLT1G LMBZ5252BLT1G LMBZ5256BLT1G

8E 8F 8G 8J 8K 8M 8P 8Q 8R 8S 8T 8V 8W 8X 8Y 8Z 81A 81B 81C 81G

Zener Voltage (Note 1.) VZ (V) @ IZT Min Nom Max (mA) 2.56 2.7 2.84 20 2.85 3 3.15 20 3.13 3.3 3.47 20 3.42 3.6 3.78 20 3.70 3.9 4.10 20

Zener Impedance ZZT @ IZT ZZK @ IZK (mA) (Ω) (Ω) 30 1300 0.25 29 1600 0.25 28 1600 0.25 24 1700 0.25 23 1900 0.25

Leakage Current IR @ VR (V) (µA) 75 1 50 1 25 1 15 1 10 1

4.08 4.46 4.84 5.32 5.89 6.46 7.79 8.64 9.50 10.4 11.40 12.35 14.25 15.20 16.15 17.10 18.05 19.00 20.90 22.80 28.50

22 19 17 11 7 5 8 10 17 22 30 13 16 17 19 21 23 25 29 33 49

5 5 5 5 5 3 3 3 3 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1

4.3 4.7 5.1 5.6 6.2 6.8 8.2 9.1 10 11 12 13 15 16 17 18 19 20 22 24 30

4.52 4.94 5.36 5.88 6.51 7.14 8.61 9.56 10.50 11.55 12.60 13.65 15.75 16.80 17.85 18.90 19.95 21.00 23.10 25.20 31.50

20 20 20 20 20 20 20 20 20 20 20 9.5 8.5 7.8 7.4 7 6.6 6.2 5.6 5.2 4.2

Note: 1. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25

1 2 2 3 4 5 6.5 7 8 8.4 9.1 9.9 11 2 13 14 14 15 17 18 23

3

3 1

2000 1900 1600 1600 1000 750 500 600 600 600 600 600 600 600 600 600 600 600 600 600 600

2

2 1

STYLE

PACKAGE

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4.1 SOT–23/ TO–236AB Surface Mount Zener Diodes (VF = 0.9V Max @ IF =10mA for all types)

Device LBZX84B10LT1G LBZX84B11LT1G LBZX84B12LT1G LBZX84B13LT1G LBZX84B15LT1G LBZX84B16LT1G LBZX84B18LT1G LBZX84B20LT1G LBZX84B22LT1G LBZX84B24LT1G LBZX84B27LT1G LBZX84B2V4LT1G LBZX84B2V7LT1G LBZX84B30LT1G LBZX84B33LT1G LBZX84B36LT1G LBZX84B39LT1G LBZX84B3V0LT1G LBZX84B3V3LT1G LBZX84B3V6LT1G LBZX84B3V9LT1G LBZX84B43LT1G LBZX84B47LT1G LBZX84B4V3LT1G LBZX84B4V7LT1G LBZX84B51LT1G LBZX84B5V1LT1G

Device Marking Z65 Z66 Z67 Z68 Z69 T19 T20 Z72 Z73 Z74 Z75 Z50 Z51 Z76 Z77 Z78 Z79 Z52 Z53 62 Z55 Z80 Z81 Z56 T10 Z82 T11

Zener Voltage (Note 1.) VZ (V) @ IZT Min Nom Max (mA) 9.77 – 10.21 5 10.76 – 11.22 5 11.74 – 12.24 5 12.91 – 13.49 5 14.34 – 14.98 5 15.85 – 16.51 5 17.56 – 18.35 5 19.52 – 20.39 5 21.54 – 22.47 5 23.72 – 24.78 5 26.19 – 27.53 5 2.43 – 2.63 5 2.69 – 2.91 5 29.19 – 30.69 5 32.15 – 33.79 5 35.07 – 36.87 5 38.22 – 39.78 5 3.01 – 3.22 5 3.32 – 3.53 5 3.6 – 3.845 5 3.89 – 4.16 5 42.14 – 43.86 5 46.6 – 47.94 5 4.17 – 4.43 5 4.55 – 4.75 5 49.98 – 51.02 5 4.98 – 5.2 5

Note: 1. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

Zener Impedance ZZT @ IZT ZZK @ IZK (mA) (Ω) (Ω) 30 60 0.5 30 60 0.5 30 80 0.5 37 80 0.5 42 80 0.5 50 80 0.5 65 80 0.5 85 100 0.5 100 100 0.5 120 120 0.5 150 150 0.5 100 1000 0.5 110 1000 0.5 200 200 0.5 250 250 0.5 300 300 0.5 130 350 1 120 1000 0.5 120 1000 0.5 100 1000 1 100 1000 1 150 375 1 170 375 1 100 1000 1 100 800 0.5 100 750 1 80 500 0.5 3

3 1

Leakage Current IR @ VR (V) (µA) 0.1 7 0.1 8 0.1 9 0.1 10 0.1 11 0.1 12 0.1 13 0.1 15 0.1 17 0.1 19 0.1 21 100 1 100 1 0.1 23 0.1 25 0.1 27 0.1 27.3 50 1 20 1 10 1 5 1 0.1 30.1 0.1 32.9 5 1 2 1 0.1 38 2 1.5

2

2 1

STYLE

PACKAGE

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4.2 SOT–23/ TO–236AB Surface Mount Zener Diodes (VF = 0.9V Max @ IF =10mA for all types)

Device LBZX84B5V6LT1G LBZX84B6V2LT1G LBZX84B6V8LT1G LBZX84B7V5LT1G LBZX84B8V2LT1G LBZX84B9V1LT1G LBZX84C51LT1G LBZX84C62LT1G LBZX84C75LT1G LMBZ5221BLT1G LMBZ5222BLT1G LMBZ5224BLT1G LMBZ5233BLT1G LMBZ5236BLT1G LMBZ5238BLT1G LMBZ5244BLT1G LMBZ5253BLT1G LMBZ5254BLT1G LMBZ5255BLT1G LMBZ5257BLT1G LMBZ5258BLT1G LMBZ5259BLT1G LMBZ5260BLT1G LMBZ5261BLT1G LMBZ5262BLT1G LMBZ5263BLT1G LMBZ5264BLT1G

Device Marking T12 T13 F2 T15 T16 T17 Y17 Y19 Y21 18A 18B 18D 18C 8L 8N 8U 81D 81E 81F 81H 81J 81K 81L 81M 81N 81P 81Q

Zener Voltage (Note 1.) VZ (V) @ IZT Min Nom Max (mA) 5.49 – 5.73 5 6.06 – 6.33 5 6.65 – 6.93 5 7.28 – 7.6 5 8.02 – 8.36 5 – 9.23 5 8.85 48 – 54 5 58.9 – 65.1 5 71.25 – 78.75 5 2.28 2.4 2.52 20 2.37 2.5 2.63 20 2.66 2.8 2.94 20 2.56 2.7 2.84 20 7.12 7.5 7.88 20 8.26 8.7 9.14 20 13.3 14 14.7 9 23.75 25 26.25 5 25.65 27 28.35 4.6 26.6 28 29.4 4.5 31.35 33 34.65 3.8 34.2 36 37.8 3.4 37.05 39 40.95 3.2 40.85 43 45.15 3 44.65 47 49.35 2.7 48.45 51 53.55 2.5 53.2 56 58.8 2.2 57 60 63 2.1

Note: 1. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

Zener Impedance ZZT @ IZT ZZK @ IZK (mA) (Ω) (Ω) 60 100 0.5 60 100 0.5 40 60 0.5 30 60 0.5 30 60 0.5 30 60 0.5 180 400 0.5 150 1000 1 250 1000 1 30 1200 0.25 30 1250 0.25 30 1400 0.25 30 1300 0.25 6 500 0.25 8 600 0.25 15 600 0.25 35 600 0.25 41 600 0.25 44 600 0.25 58 700 0.25 70 700 0.25 80 800 0.25 93 900 0.25 105 1000 0.25 125 1100 0.25 150 1300 0.25 170 1400 0.25 3

3 1

Leakage Current IR @ VR (V) (µA) 1 2.5 1 3 0.5 3.5 0.5 4 0.5 6 0.5 6 0.05 35.7 0.1 51 0.1 56 100 1 100 1 75 1 75 1 3 6 3 6.5 0.1 10 0.1 19 0.1 21 0.1 21 0.1 25 0.1 27 0.1 30 0.1 33 0.1 36 0.1 39 0.1 43 0.1 46

2

2 1

STYLE

PACKAGE

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4.3 SOT–23/ TO–236AB Surface Mount Zener Diodes (VF = 0.9V Max @ IF =10mA for all types)

Device

Zener Voltage (Note 1.) VZ (V) @ IZT

Device Marking

Min 58.9

LMBZ5265BLT1G LMBZ5266BLT1G

81R 81S

LMBZ5267BLT1G LMBZ5268BLT1G LMBZ5269BLT1G LMBZ5270BLT1G

81T 81U 81V

64.6 71.25 77.9 82.65

81W

86.45

Nom 62 68 75 82 87 91

Max 65.1 71.4 78.75 86.1 91.35 95.55

(mA) 2 1.8 1.7 1.5 1.4 1.4

Zener Impedance ZZT @ IZT ZZK @ IZK

Leakage Current

(Ω) 185

(µA) 0.1 0.1 0.1

(Ω) 1400 1600 1700

230 270 330 370

2000 2200 2300

400

Note: 1. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

IR @ VR

(mA) 0.25 0.25 0.25 0.25 0.25

0.1 0.1 0.1

0.25

52 56 62 68 69

3

3

2

2

1

(V) 47

1

STYLE

PACKAGE

4.4 SOT–23/ TO–236AB Surface Mount Zener Diodes (TA =25°C unless otherwise noted, VF =0.9V Max @ IF =10mA)

Device

LBZX84C2V4LT1G LBZX84C2V7LT1G LBZX84C3V0LT1G LBZX84C3V3LT1G LBZX84C3V6LT1G LBZX84C3V9LT1G LBZX84C4V3LT1G LBZX84C4V7LT1G LBZX84C5V1LT1G

VZI(V) Device @IZT1=5mA Marking (Note 1) Min Nom Max

Z11 Z12 Z13 Z14 Z15 Z16 W9 Z1 Z2

2.2 2.5 2.8 3.1 3.4 3.7 4 4.4 4.8

2.4 2.7 3 3.3 3.6 3.9 4.3 4.7 5.1

2.6 2.9 3.2 3.5 3.8 4.1 4.6 5 5.4

ZZT1 (Ω) @IZT1 =5mA

VZ2(V) @IZT2=1mA (Note 1)

100 100 95 95 90 90 90 80 60

1.7 1.9 2.1 2.3 2.7 2.9 3.3 3.7 4.2

VZ3 (V) @IZT3 =10mA

ZZT2 (Ω) @IZT2= 0.5mA

Min 2.6 3.0 3.3 3.6 3.9 4.1 4.4 4.5 5.0

Min Max

2.1 2.4 2.7 2.9 3.3 3.5 4 4.7 5.3

600 600 600 600 600 600 600 500 480

Note: 1. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

Max Reverse Leakage Current IR @ VR (µA) (V)

50 50 50 40 40 30 30 15 15

50 20 10 5 5 3 3 3 2

1 1 1 1 1 1 1 2 2

CPF Max @VR=0 f = 1MHz

450 450 450 450 450 450 450 260 225

3

3 1

Max 3.2 3.6 3.9 4.2 4.5 4.7 5.1 5.4 5.9

ZZT3 (Ω) @IZT3 =20mA

2

2 1

STYLE

PACKAGE

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4.5 SOT–23/ TO–236AB Surface Mount Zener Diodes (TA =25°C unless otherwise noted, VF =0.9V Max @ IF =10mA)

Device

LBZX84C5V6LT1G LBZX84C6V2LT1G LBZX84C6V8LT1G LBZX84C7V5LT1G LBZX84C8V2LT1G LBZX84C9V1LT1G LBZX84C10LT1G LBZX84C11LT1G LBZX84C12LT1G LBZX84C13LT1G LBZX84C15LT1G LBZX84C16LT1G LBZX84C18LT1G LBZX84C20LT1G LBZX84C22LT1G LBZX84C24LT1G LBZX84C27LT1G LBZX84C30LT1G LBZX84C33LT1G LBZX84C36LT1G LBZX84C39LT1G LBZX84C43LT1G LBZX84C47LT1G

Device Marking

Z3 Z4 Z5 Z6 Z7 Z8 Z9 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 Y10 Y11 Y12 Y13 Y14 Y15 Y16

VZI(V) @IZT1=5mA (Note 1) Min Nom Max

5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44

5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47

ZZT1 (Ω) @IZT1 =5mA

6 6.6 7.2 7.9 8.7

40 10 15 15 15

9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50

15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130 150 170

ZZT2 (Ω) @IZT2=

VZ2(V) @IZT2=1mA (Note 1)

0.5mA Min Max

4.8 5.6 6.3 6.9 7.6 8.4 9.3 10.2 11.2 12.3 13.7 15.2 16.7 18.7 20.7 22.7 25 27.8 30.8 33.8 36.7 39.7 43.7

400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 300 300 325 350 350 375 375

6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14 15.5 17 19 21.1 23.2 25.5 28.9 32 35 38 41 46 50

Note: 1. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

Min 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.5 13.9 15.4 16.9 18.9 20.9 22.9 25.2 28.1 31.1 34.1 37.1 40.1 44.1

Max 6.3 6.8 7.4 8 8.8 9.7 10.7 11.8 12.9 14.2 15.7 17.2 19.2 21.4 23.4 25.7 29.3 32.4 35.4 38.4 41.5 46.5 50.5

ZZT3 (Ω) @IZT3 =20mA

Max Reverse Leakage Current IR @ VR (µA) (V)

10 6 6 6 6 8 10 10 10 15 20 20 20 20 25 25 45 50 55 60 70 80 90

1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05

CPF Max @VR=0 f = 1MHz

2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14 15.4 16.8 18.9 21 23.1 25.2 27.3 30.1

200 185 155 140 135 130 130 130 130 120 110 105 100 85 85 80 70 70 70 70 45 40 32.9 40

3

3 1

VZ3 (V) @IZT3 =10mA

2

2 1

STYLE

PACKAGE

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5. SOT–23/ TO–236AB 24 WATTS Surface Mount Zener Diodes ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (VF = 0.9 V Max @ IF = 10 mA) Device Marking

Device LMBZ5V6ALT1G LMBZ6V2ALT1G LMBZ6V8ALT1G Note:

5A6 6A2 6A8

VRWM

IR@ VRWM

Volts

µA

3.0 3.0 4.5

5.0 0.5 0.5

VBR(Note 1) (V) Min Nom Max 5.32 5.89 6.46

5.6 6.2 6.8

1. VBR measured at pulse test current IT at an ambient temperature of 25°C. 2. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1.0 kHz.

@IT mA

5.88 6.51 7.14

20 1.0 1.0

A 3.0 2.76 2.5

1.26 2.80 3.4

3

3 1

8.0 8.7 9.6

ΘVBR mV/°C

I PP

VC V

2

2 1

STYLE

PACKAGE

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ESD PROTECTION

　

1. SOD–923 General ESD/ TVS Devices 2. SOD– 723 General ESD/ TVS Devices 3. SC–79/ SOD–523 General ESD/ TVS Devices 4. SC–76/ SOD–323 General ESD/ TVS Devices 5. SOT–23/ TO–236AB General ESD/ TVS Devices 6. SOT–23/ TO–236AB General ESD/ TVS Devices 7. SOT–553 General ESD/ TVS Devices 8. SC–88A/ SOT–353 General ESD/ TVS Devices 9. SOT–563 General ESD/ TVS Devices 10. SC–88/ SOT–363 General ESD/ TVS Devices 11. SC-74 Quad Bidirectional Transil Suppressor for ESD Protection 12. SOD–323 Low Capacitance ESD/ TVS Devices 13. SOT–23/ TO–236AB Low Capacitance ESD/ TVS Devices 14. SOT–23–6 Low Capacitance ESD/ TVS Devices 15. SOP–8 Low Capacitance ESD/ TVS Devices 16. EMI +ESD Protection Devices

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ESD PROTECTION

1. SOD–923 General ESD/ TVS Devices Device LESD9D3.3T5G LESD9D5.0T5G LESD9D3.3CT5G LESD9D5.0CT5G

Stand-Off Voltage VWM

MIN. Breakdown Voltage VBR

3.3 5 3.3 5

5 6.2 5 5.6

Clamping Voltage VC@IPP

Current IPP@8/20µs A

10.4 12.3 14.1 18.6

9.8 8.7 11.2 9.4

Leakage Current µA@VWM 2.5 1 1 1

Cj-pF 80 65 25 15

Power@ 8/20µs WATTS 102 107 150 150

Style A A B B

1 1

1

2

2 2

B

A

PACKAGE

2. SOD– 723 General ESD/ TVS Devices Device LESD7D3.3T5G LESD7D5.0T5G

Stand-Off Voltage VWM

MIN. Breakdown Voltage VBR

Clamping Voltage VC@IPP

3.3 5

5 6.2

10.4 12.3

Current IPP@8/20µs A 9.8 8.7

Leakage Current µA@VWM 2.5 1

Capacitance Cj-pF 80 65

Power@ 8/20µs WATTS 102 107

1 1

2 2

STYLE

PACKAGE

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3. SC–79/ SOD–523 General ESD/ TVS Devices Device LESD5Z2.5T1G LESD5Z3.3T1G LESD5Z5.0T1G LESD5Z6.0T1G LESD5Z7.0T1G LESD5Z5.0CT1G

Stand-Off Voltage VWM

MIN. Breakdown Voltage VBR

Clamping Voltage VC@IPP

2.5 3.3 5.0 6.0 7.0 5.0

4.0 5.0 6.2 6.8 7.5 5.6

10.9 14.1 18.6 20.5 22.7 18.6

Current IPP@ 8/20µs-A 11.0 11.2 9.4 8.8 8.8 9.4

Leakage Current µA@VWM

Cj-pF

6 1 1 1 1 1

145 105 80 70 65 80

Power@ 8/20µs WATTS 200 200 200 200 200 200

Style A A A A A B

1 1

1

2

2 2

A

B

PACKAGE

4. SC–76/ SOD–323 General ESD/ TVS Devices Stand-Off MIN. Break- Clamping Voltage down Voltage Voltage VC@IPP VWM VBR

Device LESD3Z5.0T1G

5

6

Current IPP@ 8/20µs-A 5

9.8

Leakage Current µA@VWM

Cj-pF 350

10

Power@ 8/20µs WATTS 350

1 1

2 2

STYLE

PACKAGE

5. SOT–23/ TO–236AB General ESD/ TVS Devices Stand-Off Voltage VWM

Device LESDA5V3LT1G LESDA6V1LT1G LESDA14V2LT1G LESDA25VLT1G

3 5.25 12 24

MIN. Breakdown Voltage VBR 5.3 6.1 14.2 25

Leakage Current µA@VWM 2 20 5 1

3

1

Cj-pF 220 140 90 50

Power@ 8/20µs WATTS 300 300 300 300

3

2

STYLE

2 1

PACKAGE

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6. SOT–23/ TO–236AB General ESD/ TVS Devices VRWM (V)

Device

VBR (V) @It =1mA

IR (µA) @ VRWM

VC (V)

IPPM(A)

CJ(pF)

@IPP=1A, 8/20µS

@8/20µS

@VR=0V, f=1MHz

Style

LGSOT04LT1G

4.0

5.0

20

8.5

17

300

A

LGSOT05LT1G

5.0

6.0

20

9.8

17

220

A

LGSOT08LT1G

8.0

8.5

5.0

13.4

15

190

A

LGSOT12LT1G

12

13.3

1.0

19

12

150

A

LGSOT15LT1G

15

16.7

1.0

24

10

140

A

LGSOT24LT1G

24

26.7

1.0

43

5.0

83

A

LGSOT36LT1G

36

40

1.0

60

2.0

80

A

LGSOT03CLT1G

3.3

4.0

20

7.0

18

400

B

LGSOT04CLT1G

4.0

5.0

20

8.5

17

300

B

LGSOT05CLT1G

5.0

6.0

20

9.8

17

220

B

LGSOT08CLT1G

8.0

8.5

5.0

13.4

15

190

B

LGSOT12CLT1G

12

13.3

1.0

19

12

90

B

LGSOT15CLT1G

15

16.7

1.0

24

10

60

B

LGSOT24CLT1G

24

26.7

1.0

43

5.0

63

B

LGSOT36CLT1G

36

40

1.0

60

2.0

60

B

3

3

3 2

2

1

A

2

1

B

1

PACKAGE

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7. SOT–553 General ESD/ TVS Devices Device LESDA5V6AV5T1G LESDA6V8AV5T1G LESDA5V6V5T1G LESDA6V2V5T1G LESDA6V8V5T1G

Stand-Off Voltage VWM

MIN. Breakdown Voltage VBR

3 4.3 3 4 4.3

5.3 6.47 5.32 5.89 6.46

Clamping Voltage VC@IPP 10 13 10.5 11.5 12.5

5

Leakage Current IPP@8/20µs Current A µA@VWM

Capacitance Cj-pF

1.6 1.6 10 9 8

15 9.5 90 80 70

5

4

1

2

1 1 1 0.5 0.1

3

1

Power@ 8/20µs WATTS 20 20 100 100 100

4

2

3

PACKAGE

STYLE

8. SC–88A/ SOT–353 General ESD/ TVS Devices Stand-Off Voltage VWM

Device

MIN. Breakdown Voltage VBR

LESDA6V1W5T1G 5

6.1

Leakage Current µA@VWM

Power@ 8/20µs WATTS

Cj-pF

1

90

150

4

5

4 5 3

1

2

2

3

1

STYLE

PACKAGE

9. SOT–563 General ESD/ TVS Devices Device LGSMF05CT1G

Stand-Off Voltage VWM

MIN. Breakdown Voltage VBR

Clamping Voltage VC@IPP

5

6.2

12 6

1

9

5

4

2

3

STYLE

Leakage Current µA@VWM

Current IPP@8/20µs A

1.0 6

5

4

1

2

3

Capacitance Cj-pF 54

Power@ 8/20µs WATTS 100

PACKAGE

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10. SC–88/ SOT–363 General ESD/ TVS Devices Stand-Off Voltage VWM

Device LESDA6V1W6T1G LESD6A6V8W6T1G LESD6A5V6W6T1G

MIN. Breakdown Voltage VBR

5.0 5.0 3.3

Leakage Current µA@VWM

6.1 6.4 5.2 5

6

1 1 1

50 40 45 5

6

4

Power@ 8/20µs WATTS

Cj-pF

Style

100 75 75

A B B

4

4

5 6 3

1

2

1

3

2

3

2 1

B

A

PACKAGE

11. SC-74 Quad Bidirectional Transil Suppressor for ESD Protection I RM@ VWM

VBR@ I R Device LESDA6V1BC6T1G

Min

Max

V

V

6.1

Max µA

mA

8

1 6

C

typ. note1

typ. 0V bias

Ω

pF

V

1 5

Rd

5

1.35

4

20

4 5 6 3

1

2

2

3

1

PACKAGE

STYLE

12. SOD–323 Low Capacitance ESD/ TVS Devices Device LGBLC05CT1G LGBLC03CT1G

Stand-Off Voltage VWM

MIN. Breakdown Voltage VBR

5 3.3

6 4

Clamping Voltage VC@IPP 18.3 19

Leakage Current µA@VWM

Current IPP@8/20µs A 17 20

5 5

Capacitance Cj-pF 3 3

Power@ 8/20µs WATTS 350 350

1 1

2 2

STYLE

PACKAGE

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13. SOT–23/ TO–236AB Low Capacitance ESD/ TVS Devices VRWM (V)

Device

IR (µA) @ VRWM

IPPM(A)

CJ(pF)

@8/20µS

@VR=0V, f=1MHz

Style

LSLVU2.8LT1G

2.8

1.0

30

8.0

A

LSL05LT1G

5.0

20

17

5.0

B

LSL12LT1G

12

1.0

12

5.0

B

LSL15LT1G

15

1.0

10

5.0

B

LSL24LT1G

24

1.0

5.0

5.0

B

3

3

2

1

2

2

1

A

3

1

B

PACKAGE

14. SOT–23–6 Low Capacitance ESD/ TVS Devices Device LGRV05-4LT1G

Stand-Off Voltage VWM

MIN. Breakdown Voltage VBR

5

6

Clamping Voltage VC@IPP 15

6

5

5

Capacitance Cj-pF 3.5

Power@ 8/20µs WATTS 500

4

4

5

Leakage Current µA@VWM

Current IPP@8/20µs A

5 6 3

1

2

2

3

1

PACKAGE

STYLE

15. SOP–8 Low Capacitance ESD/ TVS Devices VRWM (V)

Device

LSLVU2.8-4 LSLVU2.8-8

IR (µA) @ VRWM

2.8 2.8 8

7

1

2

1 1

A

IPPM(A)

CJ(pF)

@8/20µS

@VR=0V, f=1MHz

24 24

6

5

8

7

3

4

1

2 B

6

5

3

4

10 10

Style

A B

PACKAGE

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15.1 SOP– 8 Low Capacitance ESD/ TVS Devices Device LSRDA3.3-4 LSRDA05-4

Stand-Off Voltage VWM

MIN. Breakdown Voltage VBR

3.3 5

4 6

Clamping Voltage VC@IPP 10.9 13.5

8

1

Current IPP@8/20µs A 43 42

7

6

5

2

3

4

Leakage Current µA@VWM

Capacitance Cj-pF

125 20

15 15

Power@ 8/20µs WATTS 500 500

PACKAGE

STYLE

16. EMI +ESD Protection Devices

LEM4D-100L

Reverse Cut-Off Stand-Off MIN. Number of Resistance Frequency Voltage Breakdown Leakage Style Package CT-pF Lines Ohms MHz(50Ohm Current VWM Voltage VBR System) µA@VWM 6.0 150 4 DFN–8 5.0 0.1@3V 100 20 B

LEM6D-100L

5.0

6.0

0.1@3V

100

150

20

6

C

DFN–12

LEM8D-100L

5.0

6.0

0.1@3V

100

150

20

8

D

DFN–16

LUF6401MN

5.0

6.0

0.5@3V

100

150

20

6

C

DFN–12

LUF8401MN

5.0

6.0

[email protected] 100

150

20

8

D

DFN–16

LETF701T1G

5.0

6.0

1.0@3V

40

160

2

A

SC70–5L

Device

5

1

8

7

1

2

40

6

5

12 11 10 9

8

7

16 15 14 13 12 11 10 9

3

4

1

5

6

1

4

2

3

A

B

2

4

3 C

2

3

4

5

6

7

8

D

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GENERAL PURPOSE TRANSISTORS 1. SOT–723 Surface Mount General Purpose Transistors 2. SC–89 Surface Mount General Purpose Transistors 3. SC–70/ SOT–323 Surface Mount General Purpose Transistors 4. SOT–23/ TO–236AB Surface Mount General Purpose Transistors 5. SC–88/ SOT–363 Surface Mount General Purpose Transistors 6. SC–74 Surface Mount General Purpose Transistors

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GENERAL PURPOSE TRANSISTORS

1. SOT–723 Surface Mount General Purpose Transistors Device L2SA2030M3T5G

Device IC Marking (mA) BW

500

VCE(sat) hFE Max IC/IB IC /VCE (mA) Min/Max (mA)/(Volts) (Volts) 270/680 2/10 -0.25 -200/-10

VCEO (V) 12

3

3

fT TYP (MHz) 260

Polarity PNP

3

1

1

1

NPN

2

PNP

2

2

PACKAGE

2. SC–89 Surface Mount General Purpose Transistors Device L2SA1774QT1G L2SA1774RT1G L2SA1774ST1G L2SC4617QT1G L2SC4617RT1G L2SC4617ST1G

Device Marking

IC (mA)

FQ FR FS F9 BQ BR

150 150 150 150 150 150

Note*: Min

hFE@IC

VCEO (V)

Min

50 50 50 50 50 50

120 180 270 120 180 270

3

1

Max 270 390 560 270 390 560

(mA) 1.0 1.0 1.0 1.0 1.0 1.0

fT (MHz) 140 140 140 180 180 180

3

3

2

PACKAGE

Polarity PNP PNP PNP NPN NPN NPN

1 1

NPN

2

PNP

2

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3. SC–70/ SOT–323 Surface Mount General Purpose Transistors

L2SC4083NWT1G L2SC4083PWT1G L2SC4083QWT1G LMBTH10WT1G L2SC4226T1G LBC846BWT1G LBC847AWT1G LBC847BWT1G LBC847CWT1G LBC848BWT1G LBC848CWT1G LBC856BWT1G LBC857BWT1G LBC857CWT1G LBC858BWT1G LBC858CWT1G LMSB1218A-RT1G LMSD1819A-RT1G L2SA1576AQT1G L2SA1576ART1G L2SC4081QT1G L2SC4081RT1G L2SC4081ST1G LBC807-40WT1G LBC817-40WT1G

Device Marking

IC (mA)

4N 1D 4Q 3E R2 1B 1E 1F 1G 1K 1L 3B 3F 3G 3K 3L BR ZR FQ FR BQ BR BS YL YM

50 50 50 50 100 100 100 100 100 100 100 100 100 100 100 100 100 100 150 150 150 150 150 500 500

h FE @IC

VCEO (V)

Min

11 11 11 25 12 65 45 45 45 30 30 65 45 45 30 30 45 50 50 50 50 50 50 45 45

Max

56 82 120 60 40 200 110 200 420 200 420 220 220 420 220 420 210 210 120 180 120 180 270 250 250

3

(mA)

120 180 270

5 5 5 10 7 2 2 2 2 2 2 2 2 2 2 2 2 2 1 1 1 1 1 100 100

8

Device

250 450 220 450 800 450 800 475 475 800 475 800 340 340 270 390 270 390 560 600 600

fT (MHz) 3200 3200 3200 650 4000 100 100 100 100 100 100 100 100 100 100 100 – – 140 140 180 180 180 200 200

Polarity NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN PNP PNP PNP PNP PNP PNP NPN PNP PNP NPN NPN NPN PNP NPN

3 3

1

1

2 1

NPN

2

PNP

2

PACKAGE

If you want to get more information about product,welcome to call 0769-22026262 or email [email protected] www.dynasty-union.com

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3.1 SC–70/ SOT–323 Surface Mount General Purpose Transistors Device LBC846AWT1G LBC848AWT1G L2SC3356WT1G L2SA1576AST1G LBC807-16WT1G LBC807-25WT1G LBC817-16WT1G LBC817-25WT1G LMBTA06WT1G LMBTA56WT1G

Device IC Marking (mA)

hFE

VCEO (V)

Min/Max

Max (Volts)

IC /VCE (mA)/(Volts)

VCE(sat) IC/IB (mA)

fT TYP (MHz)

Polarity

1A

100

65

110/220

2.0/5.0

0.6

100/5.0

100

NPN

1J R24 FS 5AS 5B 6A 6BS GM 2GM

100 100 150 500 500 500 500 500 500

30 12 50 45 45 45 45 80 80

110/220 82/270 120/560 100/250 160/400 100/250 160/400 100 100

2.0/5.0 20/10 1/6 100/1.0 100/1.0 100/1.0 100/1.0 10/1.0 10/1.0

0.6 – 0.5 0.7 0.7 0.7 0.7 0.25 0.25

100/5.0 – 50/5 500/50 500/50 500/50 500/50 100/10 100/10

100 7GHz 140 200 200 200 200 100 50

NPN NPN PNP PNP PNP NPN NPN NPN PNP

4 SOT–23/ TO–236AB Surface Mount General Purpose Transistors Device LMBT918LT1G L9015SLT1G SBC847BLT1G L2SA812RLT1G L2SA812SLT1G L2SC1623RLT1G L2SC1623SLT1G LMBTA94LT1G LMBT6520LT1G LMBT6517LT1G LMBT6427LT1G L2SD1781KRLT1G L2SB1197KQLT1G L2SB1197KRLT1G LMBTH10QLT1G

Device Marking M3B 15S S1F M6 M7 L6 L7 4Z 2Z 1Z 1V AFR AHQ AHR 3EQ

IC (mA) 50 100 100 150 150 150 150 150 500 500 500 800 800 800 –

h FE @/IC

VCEO (V)

Min

15 45 45 50 50 50 50 400 350 350 40 32 32 32 25

Max

20 300 200 180 270 180 270 75 20 20 20 180 120 180 120

3

(mA)

– 600 450 390 560 390 560 200 200 200 200 390 270 390 –

3 1 2 1 1 1 1 10 50 50 100 100 100 100 4

fT (MHz) – 300 – 180 180 180 180 – – – – 150 200 200 650

Polarity NPN PNP NPN PNP PNP NPN NPN PNP PNP NPN NPN NPN PNP PNP PNP

3 3

1

1

2 1

NPN

2

PNP

2

PACKAGE

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4.1 SOT–23/ TO–236AB Surface Mount General Purpose Transistors Device LBCW65ALT1G LBCW68GLT1G LBCW70LT1G LBCX19LT1G LMBT918LT1G LMBT5087LT1G LMBT5401LT1G LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G LBC846ALT1G LBC846BLT1G LBC847ALT1G LBC847BLT1G LBC847CLT1G LBC848ALT1G LBC848BLT1G LBC848CLT1G LBC856ALT1G LBC856BLT1G LBC857ALT1G LBC857BLT1G LBC857CLT1G LBC858ALT1G LBC858BLT1G LBC858CLT1G LMBT5551LT1G

Device IC Marking (mA) EA DG H2 U1 M3B 2Q 2L 5A1 5B1 5C1 6A 6B 6C 1A 1B 1E 1F 1G 1J 1K 1L 3A 3B 3E 3F 3G 3J 3K 3L G1

800 800 100 500 50 50 500 500 500 500 500 500 500 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 600

VCEO (V) 32 45 45 45 15 50 150 45 45 45 45 45 45 65 65 45 45 45 30 30 30 65 65 45 45 45 30 30 30 140

VCE(sat)

hFE Min/Max 75/220 120/400 215/500 100/600 20 250/800 60/240 100/250 160/400 250/600 100/250 160/400 250/600 110/220 200/450 110/220 200/450 420/800 110/220 200/450 420/800 125/250 220/475 125/250 220/475 420/800 125/250 220/475 420/800 80/250

IC /VCE (mA)/(Volts) 10/1.0 10/1.0 2.0/5.0 100/1.0 3.0/1.0 0.1/5.0 10/5.0 100/1.0 100/1.0 100/1.0 100/1.0 100/1.0 100/1.0 2.0/5.0 2.0/5.0 2.0/5.0 2.0/5.0 2.0/5.0 2.0/5.0 2.0/5.0 2.0/5.0 2.0/5.0 2.0/5.0 2.0/5.0 2.0/5.0 2.0/5.0 2.0/5.0 2.0/5.0 2.0/5.0 10/5.0

Max (Volts) 0.7 1.5 0.3 0.62 0.4 0.3 0.5 0.7 0.7 0.7 0.7 0.7 0.7 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.65 0.65 0.65 0.65 0.65 0.65 0.65 0.65 0.20

IC/IB (mA) 500/50 300/30 10/0.5 500/50 10/1.0 10/1.0 50/0.5 500/50 500/50 55/50 500/50 500/50 500/50 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 50/5.0

fT TYP (MHz) 100 100 – – 600 40 100 200 200 200 200 200 200 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 –

Polarity NPN PNP PNP NPN NPN PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN PNP PNP PNP PNP PNP PNP PNP PNP NPN

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4.2 SOT–23/ TO–236AB Surface Mount General Purpose Transistors Device SBC847BLT1G L2SC3837LT1G L2SC3837QLT1G L2SC3838LT1G L2SC3838QLT1G L9012QALT1G L9012RLT1G L9012SLT1G L9013QALT1G L9014TLT1G L9015HRLT1G LBC850BLT1G LMBT6429LT1G LMBTA70LT1G SSBC847BLT1G

Device IC Marking (mA)

VCEO (V)

S1F AC ACQ AD ADQ 12A 12R 12S 13A 14T A4G 2F 1L M2C SK

45 20 20 11 11 20 20 20 20 45 45 45 45 40 45

100 50mA 50mA 50mA 50 500 500 500 500 100 100 100 200 100 100

hFE Min/Max 200/450 56/180 120/270 56/180 120/270 150/220 200/400 300/600 150/220 400/1000 200/400 200/450 500/– 40/400 200/450

3

VCE(sat)

IC /VCE (mA)/(Volts) 2.0/5.0 10/10 10/10 5/10 5/10 50/1 50/1 50/1 50/1 5/1 1/5 2/5 1/5 5/10 2.0/5.0

Max (Volts) 0.6 0.5 0.5 0.5 0.5 0.6 0.6 0.6 0.6 0.3 0.3 0.6 0.6 0.25 0.6

IC/IB (mA) 100/5.0 20/4 20/4 10/5 10/5 500/50 500/50 500/50 500/50 100/5 100/5 100/5 100/5 10/1 100/5.0

fT TYP (MHz) 100 1500 1500 3.2 3.2 – – – – – – 100 400 125 100

Polarity NPN NPN NPN NPN NPN PNP PNP PNP NPN NPN PNP NPN NPN PNP NPN

3 3

1

1

2 1

NP N

2

PN P

2

PACKAGE

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4.3 SOT–23/ TO–236AB Surface Mount General Purpose Transistors Device LMBT6427LT1G LMBT6517LT1G LMBT6520LT1G LMBTA05LT1G LMBTA06LT1G LMBTA13LT1G LMBTA14LT1G LMBTA42LT1G LMBTA43LT1G LMBTA55LT1G LMBTA56LT1G LMBTA92LT1G LMBTH10LT1G L2SD2114KVLT1G L2SD2114KWLT1G L8050HPLT1G L8550HPLT1G L9012PLT1G L9013PLT1G

Device IC Marking (mA) 1V 1Z 2Z 1H 1GM 1M 1N 1D M1E 2H 2GM 2D 3EM BV BW 1HA 1HB 12P 13P

500 500 500 500 500 300 300 500 500 500 500 500 50 500 500 1500 1500 500 500

VCEO (V) 40 350 350 60 80 VCES=30 VCES=30 300 200 60 80 300 25 20 20 25 25 20 20

VCE(sat) Max IC/IB (Volts) (mA)

hFE Min/Max 10,000/100,000 30/200 30/200 100 100 5000 10,000 40 40 100 100 25 60 820/1800 1200/2700 120/200 120/200 100/200 100/200

3

IC /VCE (mA)/(Volts) 10/5.0 30/10 30/10 10/1.0 10/1.0 10/5.0 10/5.0 30/10 30/10 10/1.0 10/1.0 30/10 4.0/10 10/3 10/3 100/1 100/1 50/1 50/1

50/0.5 50/5.0 50/5.0

1.2 1.0 1.0 0.25 0.25 1.5 1.5 0.5 0.5 0.25 0.25 0.5 0.5 0.4 0.4 0.5 0.5 0.6 0.6

100/10 100/10 100/0.1 100/0.1 2.0 2.0 100/10 100/10 20/2.0 4.0/0.4 500/20 500/20 800/80 800/80 500/50 500/50

fT TYP (MHz) – 40 40 100 100 125 125 50 50 50 50 50 650 3500 3500 – – – –

Polarity NPN NPN PNP NPN NPN NPN NPN NPN NPN PNP PNP PNP NPN NPN NPN NPN PNP PNP NPN

3 3

1

1

2 1

NPN

2

PNP

2

PACKAGE

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4.4 SOT–23/ TO–236AB Surface Mount General Purpose Transistors Device L8050HQLT1G L8550HQLT1G L8050PLT1G L8050QLT1G L8550PLT1G L8550QLT1G L9012QLT1G L9013QLT1G L9013RLT1G L9013SLT1G L9014QLT1G L9014RLT1G L9014SLT1G L9015QLT1G L9015RLT1G L2SC3356LT1G L2SC1623QLT1G L2SC2411KQLT1G L2SC2411KRLT1G L2SA1036KQLT1G L2SA1036KRLT1G L2SC2412KQLT1G L2SC2412KRLT1G L2SC2412KSLT1G L2SA1037AKQLT1G L2SA1037AKRLT1G L2SA1037AKSLT1G L2SA812QLT1G

Device Marking 1HC 1HD 80P 1YC 85P 1YD 12Q 13Q 13R 13S 14Q 14R 14S 15Q 15R R24 L5 CQ CR HQ HR BQ BR G1F FQ FR G3F M8

IC

h FE @/IC

VCEO (V)

(mA) 1500 1500 800 800 800 800 500 500 500 500 100 100 100 100 100 100 150 500 500 500 500 150 150 150 150 150 150 150

25 25 25 25 25 25 20 20 20 20 45 45 45 45 45 12 50 32 32 32 32 50 50 50 50 50 50 50

Min 150 150 120 150 120 150 150 150 200 300 150 200 300 150 200 82 120 120 180 120 180 120 180 270 120 180 270 120

3

Max

(mA)

300 300 200 300 200 300 300 300 400 600 300 400 600 300 400 270 270 270 390 270 390 270 390 560 270 390 560 270

50 50 50 50 50 50 50.0 50.0 50.0 50.0 1.0 1.0 1.0 1.0 1.0 10 1.0 100 100 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1

fT (MHz) – – – – – – 100 100 100 100 300 300 300 150 300 7000 180 250 250 200 200 180 180 180 140 140 140 180

Polarity NPN PNP NPN NPN PNP PNP PNP NPN NPN NPN NPN NPN NPN PNP PNP NPN NPN NPN NPN PNP PNP NPN NPN NPN PNP PNP PNP PNP

3 3

1

1

2 1

NPN

2

PNP

2

PACKAGE

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5. SC–88/ SOT–363 Surface Mount General Purpose Transistors IC (mA)

Device Marking

Device LBC847BDW1T1G LBC848CDW1T1G LBC857BDW1T1G LBC857CDW1T1G LBC846BPDW1T1G LBC847BPDW1T1G UMF23NDW1T1G LMBT5551DW1T1G

1F 1L 3F 3G BB 3F F23 G1

hFE @/I C

VCEO (V)

100 100 100 100 100 100 150 600

Min

45 30 45 45 65 45 50 140

Max

200 420 220 420 200 200 180 80

fT (MHz)

(mA)

450 800 475 800 475 475 390 250

2.0 2.0 2.0 2.0 2.0 2.0 1.0 10

Style

100 100 100 100 100 100 140 –

A A B B C C D A

5.1 SC–88/ SOT–363 Surface Mount General Purpose Transistors Device IC Marking (mA)

Device LBC846ADW1T1G LBC846BDW1T1G LBC847CDW1T1G LBC847CPDW1T1G LBC848BDW1T1G LBC848BPDW1T1G LBC848CPDW1T1G LBC856BDW1T1G LBC858BDW1T1G LBC858CDW1T1G LMBT4413DW1T1G UMF23NDW1T1G 3

2

1

VCEO (V)

VCE(sat) hFE Max IC/IB IC /VCE (mA) Min/Max (mA)/(Volts) (Volts)

fT TYP Polarity Style (MHz)

1A

100

65

110/220

2/5

0.25

10/0.5

100

NPN

A

1B 1G BG 1K BK BL 3B 3K 3L K13 F23

100 100 100 100 100 100 100 100 100 600 150

65 45 45V 30 30 30 65 30 30 40 50

200/450 420/800 420/800 200/450 200/450 420/800 220/475 220/475 420/800 80 180/390

2/5 2/5 2/5 2.0/5.0 2.0/5.0 2/5 2/5 2/5 2/5 10/1.0 1/6

0.25 0.25 0.25 0.6 0.6 0.25 0.3 0.3 0.3 0.4 0.5

10/0.5 10/0.5 10/0.5 100/5.0 100/5.0 10/0.5 10/0.5 10/0.5 10/0.5 150/15 50/5

100 100

NPN NPN NPN/PNP NPN NPN/PNP NPN/PNP PNP PNP PNP NPN/PNP NPN/PNP

A A A A C C C C C C D

3

2

1

3

2

1

3

2

100 100 100 100 100 100 200 250

4

1

5 6

R1

3 2

R2 1 4

5

6

A

4

5

6

B

4

5

6

C

4

5

PACKAGE D ( R1=10kΩ  R2=10kΩ ) 6

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6. SC–74 Surface Mount General Purpose Transistors Device LSBTH10T1G

Device IC Marking (mA)

VCEO (V)

H8A

25 3

hFE Min/Max 60/ 2

Max (Volts)

IC /VCE (mA)/(Volts) 4/10 1

0.5

VCE(sat) IC/IB (mA) 4/0.4

fT TYP (MHz) 650

Polarity NPN

4 5 6 3 2

4

5

6

1

PACKAGE

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BIAS RESISTOR TRANSISTORS 1. SOT–723 Surface Mount Bias Resistor Transistors 2. SC–89 Surface Mount Bias Resistor Transistors 3. SC–70/ SOT–323 Surface Mount Bias Resistor Transistors 4. SOT–23/ TO–236AB Surface Mount Bias Resistor Transistors 5. SC–88/ SOT–363 Surface Mount Dual Bias Resistor Transistors

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BIAS RESISTOR TRANSISTORS 1. SOT–723 Surface Mount Bias Resistor Transistors

LDTA114EM3T5G LDTA114TM3T5G LDTA114YM3T5G LDTA115TM3T5G LDTA123EM3T5G LDTA123JM3T5G LDTA124EM3T5G

6A 6E 6D 99 6H 6M 6B

100 100 100 -100 100 100 100

50 50 50 -50 50 50 50

LDTA124XM3T5G LDTA143EM3T5G LDTA143TM3T5G LDTA143ZM3T5G LDTA144EM3T5G LDTA144TM3T5G LDTC114EM3T5G LDTC114TM3T5G LDTC114YM3T5G LDTC115EM3T5G

6L 6J 6F 6K 6C 6T 8A 94 8D 8N

100 100 100 100 100 100 100 100 100 100

LDTC123EM3T5G LDTC123JM3T5G LDTC124EM3T5G LDTC124XM3T5G LDTC143EM3T5G LDTC143TM3T5G LDTC143ZM3T5G LDTC144EM3T5G LDTC144TM3T5G

8H 8M 8B 8L 8J 8F 8K 8C 8T

100 100 100 100 100 100 100 100 100

Min 35 160 80 100 8 80

5 5 5 -1 5 5

10 10 10 100 2.2 2.2

50 50 50 50 50 50 50 50 50 50

60 80 15 160 80 80 100 35 160 80 80

5 5 5 5 5 5 7 5 5 5 5

22 22 4.7 4.7 4.7 47 47 10 10 10 100

50 50 50 50 50 50 50 50 50

8 80 60 80 15 160 80 80 160

5 5 5 5 5 5 5 5 5

2.2 2.2 22 22 4.7 4.7 4.7 47 47

3

R2 (kΩ) 10 8

(V)

R1 (kΩ)

hFE@IC (mA)

47 – 2.2 47 22 47 4.7 8

VCEO

4.7 47 – 10 8

IC (mA)

47 100 2.2 47 22 47 4.7 8

Device Marking

47 47 8

Device

Polarity PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

3 3

R1

R1

1

1 R2

R2 1

NPN

2

PNP

2

2

PACKAGE

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2 SC–89 Surface Mount Bias Resistor Transistors Device

IC (mA)

Device Marking

VCEO (V)

hFE@IC Max

Min

R1 (kΩ)

(mA)

LDTC123EET1G LDTC143EET1G LDTC114EET1G LDTC124EET1G LDTC144EET1G LDTC115EET1G LDTC113ZET1G

N1 N2 N3 N4 N5 N6 N7

100 100 100 100 100 100 100

50 50 50 50 50 50 50

20 20 30 56 68 82 33

– – – – – – –

20 10 5 5 5 5 5

2.2 4.7 10 22 47 100 1

LDTC123YET1G LDTC123JET1G LDTC143XET1G LDTC143YET1G LDTC143ZET1G LDTC114WET1G LDTC114YET1G LDTC124XET1G LDTC144VET1G LDTC144WET1G LDTC113YET1G LDTC123TKT1G LDTC143TET1G LDTC114TET1G LDTC124TET1G LDTC144TET1G LDTC115TET1G LDTC125TET1G LDTC114GET1G LDTC124GET1G LDTC144GET1G

N8 N9 N10 N11 N12 N13 N14 N15 N16 N17 N18 N19 N20 N21 N22 N23 N24 N25 N26 N27 N28

100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100

50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50

33 80 30 – 80 24 68 68 33 56 100 100 100 100 100 100 100 100 30 68 68

– – – – – – – – – – 600 600 600 600 600 600 600 600 – – –

10 10 10 5 10 10 5 5 5 5 – 1 1 1 1 1 1 1 5 5 5

2.2 2.2 4.7 4.7 4.7 10 10 22 47 47 1 2.2 4.7 10 22 47 100 200 – – –

3

R2 (kΩ)

Polarity

2.2 4.7 10 22 47 100

NPN NPN NPN NPN NPN NPN

10 10 47 10 22 47 4.7 47 47 10 22 – – – – – – – – 10 22 47

NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

3 3

R1

R1

1

1 R2

R2 1

NPN

2

PNP

2

2

PACKAGE

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2.1 SC–89 Surface Mount Bias Resistor Transistors Device

Device Marking

LDTC115GET1G LDTA123EET1G LDTA143EET1G LDTA114EET1G LDTA124EET1G LDTA144EET1G LDTA115EET1G

N29 P1 P2 P3 P4 P5 P6

LDTA113ZET1G LDTA123YET1G LDTA123JET1G LDTA143XET1G LDTA143YET1G LDTA143ZET1G LDTA114WET1G LDTA114YET1G LDTA124XET1G LDTA144VET1G LDTA144WET1G LDTA113TKT1G LDTA123TKT1G LDTA143TET1G LDTA114TET1G LDTA124TET1G LDTA144TET1G LDTA115TET1G LDTA125TET1G LDTA114GET1G LDTA124GET1G

P7 P8 P9 P10 P11 P12 P13 P14 P15 P16 P17 P18 P19 P20 P21 P22 P23 P24 P25 P26 P27

VCEO

IC (mA)

(V)

hFE@IC Max

Min

R1 (kΩ)

(mA)

R2 (kΩ)

Polarity

100 100 100 100 100 100

50 50 50 50 50 50

68 20 20 30 56 68

– – – – – –

5 20 10 5 5 5

– 2.2 4.7 10 22 47

100 2.2 4.7 10 22 47

NPN PNP PNP PNP PNP PNP

100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100

50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50

82 33 33 80 30 – 80 24 68 68 33 56 100 56 100 100 100 100 100 100 30 68

– – – – – – – – – – – – 600 – 600 600 600 600 600 600 – –

5 5 10 10 10 5 10 10 5 5 5 5 1 1 1 1 1 1 1 1 5 5

100 1 2.2 2.2 4.7 4.7 4.7 10 10 22 47 47 1 2.2 4.7 10 22 47 100 200 – –

100 10 10 47 10 22 47 4.7 47 47 10 22 – – – – – – – – 10 22

PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP

3

3 3

R1

R1

1

1 R2

R2 1

NPN

2

PNP

2

2

PACKAGE

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2.2 SC–89 Surface Mount Bias Resistor Transistors Device

IC (mA)

Device Marking

VCEO (V)

hFE@IC Max

Min

LDTA144GET1G LDTA115GET1G LDTD123TET1G LDTD143TKT1G LDTD114TET1G LDTD113EET1G LDTD123EET1G

P28 P29 E1 E2 E3 E4 E5

100 100 500 500 500 500 500

50 50 50 50 50 50 50

68 68 100 56 33 39 47

– – 600 – – – –

LDTD143EET1G LDTD114GKT1G LDTD113ZET1G LDTD123YET1G LDTD114EET1G LDTB123TET1G LDTB143TKT1G LDTB114TKT1G LDTB113EET1G LDTB123EET1G LDTB143EET1G LDTB114GKT1G LDTB113ZET1G LDTB123YET1G LDTB114EET1G LDTDG12GPT1G LDTBG12GPT1G

E6 E7 E8 E9 E10 K1 K2 K3 K4 K5 K6 K7 K8 K9 K10 H1 H2

500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 1000 1000

50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50

56 100 56 56 100 33 100 56 39 47 56 – 56 56 100 – –

– 600 – – 600 – 600 – – – – – – – 600 – –

3

(mA)

R1 (kΩ)

R2 (kΩ)

Polarity

5 5 50 50 50 50

– – 2.2 4.7 10 1

47 100 – – – 1

PNP PNP NPN NPN NPN NPN

50 50 100 50 50 50 50 50 50 50 50 50 100 50 50 50 – –

2.2 4.7 – 1 2.2 10 2.2 4.7 10 1 2.2 4.7 – 1 2.2 10 1 1

2.2 4.7 10 10 10 10 – – – 1 2.2 4.7 10 10 10 10 22 22

NPN NPN NPN NPN NPN NPN PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP NPN PNP

3 3

R1

R1

1

1 R2

R2 1

NPN

2

PNP

2

2

PACKAGE

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3. SC–70/ SOT–323 Surface Mount Bias Resistor Transistors

6A 6B

LMUN5113T1G LMUN5114T1G

6C 6D

LMUN5115T1G LMUN5116T1G

6E 6F 6J

LMUN5132T1G LMUN5134T1G LMUN5211T1G LMUN5212T1G LMUN5213T1G LMUN5214T1G LMUN5215T1G LMUN5216T1G LMUN5233T1G LMUN5130T1G LMUN5131T1G LMUN5133T1G LMUN5135T1G LMUN5136T1G LMUN5137T1G LMUN5230T1G LMUN5231T1G LMUN5232T1G LMUN5234T1G LMUN5235T1G LMUN5237T1G

(V)

100

50 50

100 100

50 50

100 100

50 50 50

100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100

6L 8A 8B 8C 8D 8E 8F 8K 6G 6H 6K 6M 6N 6P 8G 8H 8J 8L 8N 8P

50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50

Min

hFE@I C (mA)

35

5.0 5.0

60 80

5.0 5.0

80 160

5.0 5 5.0

160 15 80 35 60 80 80 160 160 80 3 8 80 80 80 80 3 8 15 80 80 80

5 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5 5 5 5 5 5 5 5 5 5 5 5

3

10 22

22 47

47 47

10 10

4.7 4.7

4.7 4.7 22 10 22 47 10 10 4.7 4.7 1 2.2 4.7 2.2 100 47 1 2.2 4.7 22 2.2 47

47 10 22 47 47

47 1 2.2 47 47 100 22 1 2.2 4.7 47 47 22

PNP PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN NPN PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN

3

R1 1

R2

NPN

10

Polarity

3

R1 1

R2 (kΩ)

R1 (kΩ)

8

LMUN5111T1G LMUN5112T1G

VCEO

IC (mA)

8

Device Marking

8

Device

2

R2 1

2

PNP

2

PACKAGE

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3.1 SC–70/ SOT–323 Surface Mount Bias Resistor Transistors Device LDTC123EWT1G LDTC143EWT1G LDTC114EWT1G LDTC124EWT1G LDTC144EWT1G LDTC115EWT1G LDTC113ZWT1G LDTC123YWT1G LDTC123JWT1G LDTC143XWT1G LDTC143YWT1G LDTC143ZWT1G LDTC114WWT1G LDTC114YWT1G LDTC124XWT1G LDTC144VWT1G LDTC144WWT1G LDTC113YWT1G LDTC123TWT1G LDTC143TWT1G LDTC114TWT1G LDTC124TWT1G LDTC144TWT1G LDTC115TWT1G LDTC125TWT1G LDTC114GWT1G LDTC124GWT1G LDTC144GWT1G

Device Marking N1 N2 N3 N4 N5 N6 N7 N8 N9 N10 N11 N12 N13 N14 N15 N16 N17 N18 N19 N20 N21 N22 N23 N24 N25 N26 N27 N28

IC

VCEO

(mA)

(V)

100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100

50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50

20 20 30 56 68 82 33 33 80 30 – 80 24 68 68 33 56 100 100 100 100 100 100 100 100 30 68 68

3

– – – – – – – – – – – – – – – – – 600 600 600 600 600 600 600 600 – – –

20 10 5 5 5 5 5 10 10 10 5 10 10 5 5 5 5 – 1 1 1 1 1 1 1 5 5 5

2.2 4.7 10 22 47 100 1 2.2 2.2 4.7 4.7 4.7 10 10 22 47 47 1 2.2 4.7 10 22 47 100 200 – – –

R2 (kΩ) 2.2 4.7 10 22 47 100 10 10 47 10 22 47 4.7 47 47 10 22 – – – – – – – – 10 22 47

Polarity NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

3

R1

1

R1 (kΩ)

(mA)

3

R1 1 R2

NPN

hFE@IC Max

Min

2

R2 1

2

PNP

2

PACKAGE

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3.2 SC–70/ SOT–323 Surface Mount Bias Resistor Transistors Device LDTC115GWT1G LDTA123EWT1G LDTA143EWT1G LDTA114EWT1G LDTA124EWT1G LDTA144EWT1G LDTA115EWT1G LDTA113ZWT1G LDTA123YWT1G LDTA123JWT1G LDTA143XWT1G LDTA143YWT1G LDTA143ZWT1G LDTA114WWT1G LDTA114YWT1G LDTA124XWT1G LDTA144VWT1G LDTA144WWT1G LDTA113TWT1G LDTA123TWT1G LDTA143TWT1G LDTA114TWT1G LDTA124TWT1G LDTA144TWT1G LDTA115TWT1G LDTA125TWT1G LDTA114GWT1G LDTA124GWT1G

N29 P1 P2 P3 P4 P5 P6 P7 P8 P9 P10 P11 P12 P13 P14 P15 P16 P17 P18 P19 P20 P21 P22 P23 P24 P25 P26 P27

VCEO

IC (mA)

Device Marking

100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100

(V)

Min 68 20 20 30 56 68 82 33 33 80 30 – 80 24 68 68 33 56 100 56 100 100 100 100 100 100 30 68

50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 3

– – – – – – – – – – – – – – – – – – 600 – 600 600 600 600 600 600 – –

R1 (kΩ)

(mA) 5 20 10 5 5 5 5 5 10 10 10 5 10 10 5 5 5 5 1 1 1 1 1 1 1 1 5 5

– 2.2 4.7 10 22 47 100 1 2.2 2.2 4.7 4.7 4.7 10 10 22 47 47 1 2.2 4.7 10 22 47 100 200 – –

R2 (kΩ) 100 2.2 4.7 10 22 47 100 10 10 47 10 22 47 4.7 47 47 10 22 – – – – – – – – 10 22

Polarity NPN PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP

3

R1

3

R1

1

1 R2

NPN

hFE@IC Max

2

R2 1

2

PNP

2

PACKAGE

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3.3 SC–70/ SOT–323 Surface Mount Bias Resistor Transistors Device

VCEO

IC (mA)

Device Marking

(V)

hFE@IC Max

Min

LDTA144GWT1G LDTA115GWT1G LDTD123TWT1G LDTD143TWT1G LDTD114TWT1G LDTD113EWT1G LDTD123EWT1G

P28 P29 E1 E2 E3 E4 E5

100 100 500 500 500 500 500

50 50 50 50 50 50 50

68 68 100 56 33 39 47

– – 600 – – – –

LDTD143EWT1G LDTD114GWT1G LDTD113ZWT1G LDTD123YWT1G LDTD114EWT1G LDTB123TWT1G LDTB143TWT1G LDTB114TWT1G LDTB113EWT1G LDTB123EWT1G LDTB143EWT1G LDTB114GWT1G LDTB113ZWT1G LDTB123YWT1G LDTB114EWT1G LDTDG12GPWT1G LDTBG12GPWT1G

E6 E7 E8 E9 E10 K1 K2 K3 K4 K5 K6 K7 K8 K9 K10 H1 H2

500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 1000 1000

50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50

56 100 56 56 100 33 100 56 39 47 56 – 56 56 100 – –

– 600 – – 600 – 600 – – – – – – – 600 – –

3

Polarity

5 5 50 50 50 50

– – 2.2 4.7 10 1

47 100 – – – 1

PNP PNP NPN NPN NPN NPN

50 50 100 50 50 50 50 50 50 50 50 50 100 50 50 50 – –

2.2 4.7 – 1 2.2 10 2.2 4.7 10 1 2.2 4.7 – 1 2.2 10 1 1

2.2 4.7 10 10 10 10 – – – 1 2.2 4.7 10 10 10 10 22 22

NPN NPN NPN NPN NPN NPN PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP NPN PNP

3

R1 1

R2

NPN

R2 (kΩ)

3

R1 1

R1 (kΩ)

(mA)

2

R2 1

2

PNP

2

PACKAGE

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4. SOT–23/ TO–236AB Surface Mount Bias Resistor Transistors

100 100 100 100 100 100

50 50 50 50 50 50

35 60 80 80 160 160

5 5 5 5 5 5

10 22 47 10 10 4.7

100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100

50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50

15 80 80 35 60 80 80 160 160 3 8 15 80 80 80 160 160

5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5.0

4.7 4.7 22 10 22 47 10 10 4.7 1 2.2 4.7 4.7 22 2.2 2.2 100

3

1 2.2 4.7 47 47 47

PNP PNP PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

3

R1 1

R2

NPN

4.7 47 47 10 22 47 47

Polarity

3

R1 1

10 22 47 47 8

A6K A6L A8A A8B A8C A8D A8E A8F A8G A8H A8J A8K A8L A8M A8R A8U

R2 (kΩ)

R1 (kΩ)

hFE@IC (mA)

8

LMUN2133LT1G LMUN2134LT1G LMUN2211LT1G LMUN2212LT1G LMUN2213LT1G LMUN2214LT1G LMUN2215LT1G LMUN2216LT1G LMUN2230LT1G LMUN2231LT1G LMUN2232LT1G LMUN2233LT1G LMUN2234LT1G LMUN2235LT1G LMUN2238LT1G LMUN2241LT1G

Min

8

A6A A6B A6C A6D A6E A6F A6J

(V)

8

LMUN2111LT1G LMUN2112LT1G LMUN2113LT1G LMUN2114LT1G LMUN2115LT1G LMUN2116LT1G LMUN2132LT1G

VCEO

8

IC (mA)

Device Marking

8

Device

2

R2 1

2

PNP

2

PACKAGE

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4.1 SOT–23/ TO–236AB Surface Mount Bias Resistor Transistors

A6P A8P A8T A6M

LMUN2130LT1G LMUN2131LT1G

A6G A6H

LMUN2136LT1G LMUN2138LT1G LMUN2140LT1G LMUN2236LT1G

A6N A6R A6T A8N

(V) 50

100 100 100 100 100

5 5 5 5

55 22 47 1 2.2 100

100

Polarity PNP NPN NPN PNP PNP PNP PNP PNP PNP NPN

3

R1 1

R2

NPN

2.2 100 2.2 47 100

R2 (kΩ)

3

R1 1

2.2 1

5 5

160 120 80

3

47 47 47

5 5 5

8 80

50 50 50 50

100 100 100

5

80 3

50 50

100 100

Min 80 80 160

50 50 50

R1 (kΩ)

hFE@IC (mA)

8

LMUN2137LT1G LMUN2237LT1G LMUN2240LT1G LMUN2135LT1G

VCEO

8

IC (mA)

Device Marking

8

Device

2

R2 1

2

PNP

2

PACKAGE

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4.2 SOT–23/ TO–236AB Surface Mount Bias Resistor Transistors Device LDTC123ELT1G LDTC143ELT1G LDTC114ELT1G LDTC124ELT1G LDTC144ELT1G LDTC115ELT1G LDTC113ZLT1G LDTC123YLT1G LDTC123JLT1G LDTC143XLT1G LDTC143YLT1G LDTC143ZLT1G LDTC114WLT1G LDTC114YLT1G LDTC124XLT1G LDTC144VLT1G LDTC144WLT1G LDTC113YLT1G LDTC123TLT1G LDTC143TLT1G LDTC114TLT1G LDTC124TLT1G LDTC144TLT1G LDTC115TLT1G LDTC125TLT1G LDTC114GLT1G LDTC124GLT1G LDTC144GLT1G

VCEO (V)

IC (mA)

Device Marking

hFE@IC Max

Min

R1 (kΩ)

(mA)

R2 (kΩ)

Polarity

N1 N2 N3 N4 N5 N6

100 100 100 100 100 100

50 50 50 50 50 50

20 20 30 56 68 82

– – – – – –

20 10 5 5 5 5

2.2 4.7 10 22 47 100

2.2 4.7 10 22 47 100

NPN NPN NPN NPN NPN NPN

N7 N8 N9 N10 N11 N12 N13 N14 N15 N16 N17 N18 N19 N20 N21 N22 N23 N24 N25 N26 N27 N28

100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100

50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50

33 33 80 30 – 80 24 68 68 33 56 100 100 100 100 100 100 100 100 30 68 68

– – – – – – – – – – – 600 600 600 600 600 600 600 600 – – –

5 10 10 10 5 10 10 5 5 5 5 – 1 1 1 1 1 1 1 5 5 5

1 2.2 2.2 4.7 4.7 4.7 10 10 22 47 47 1 2.2 4.7 10 22 47 100 200 – – –

10 10 47 10 22 47 4.7 47 47 10 22 – – – – – – – – 10 22 47

NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

3

3

R1 1 R2

NPN

3

R1

1

2

R2 1

2

PNP

2

PACKAGE

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4.3 SOT–23/ TO–236AB Surface Mount Bias Resistor Transistors Device

VCEO

IC (mA)

Device Marking

(V)

hFE@IC Max

Min

LDTC115GLT1G LDTA123ELT1G LDTA143ELT1G LDTA114ELT1G LDTA124ELT1G LDTA144ELT1G

N29 P1 P2 P3 P4 P5

100 100 100 100 100 100

50 50 50 50 50 50

68 20 20 30 56 68

– – – – – –

5 20 10 5 5 5

LDTA115ELT1G LDTA113ZLT1G LDTA123YLT1G LDTA123JLT1G LDTA143XLT1G LDTA143YLT1G LDTA143ZLT1G LDTA114WLT1G LDTA114YLT1G LDTA124XLT1G LDTA144VLT1G LDTA144WLT1G LDTA113TLT1G LDTA123TLT1G LDTA143TLT1G LDTA114TLT1G LDTA124TLT1G LDTA144TLT1G LDTA115TLT1G LDTA125TLT1G LDTA114GLT1G LDTA124GLT1G

P6 P7 P8 P9 P10 P11 P12 P13 P14 P15 P16 P17 P18 P19 P20 P21 P22 P23 P24 P25 P26 P27

100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100

50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50

82 33 33 80 30 – 80 24 68 68 33 56 100 56 100 100 100 100 100 100 30 68

– – – – – – – – – – – – 600 – 600 600 600 600 600 600 – –

5 5 10 10 10 5 10 10 5 5 5 5 1 1 1 1 1 1 1 1 5 5

3

Polarity

– 2.2 4.7 10 22

100 2.2 4.7 10 22

NPN PNP PNP PNP PNP

47 100 1 2.2 2.2 4.7 4.7 4.7 10 10 22 47 47 1 2.2 4.7 10 22 47 100 200 – –

47 100 10 10 47 10 22 47 4.7 47 47 10 22 – – – – – – – – 10 22

PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP

3

R1 1

R2

NPN

R2 (kΩ)

3

R1 1

R1 (kΩ)

(mA)

2

R2 1

2

PNP

2

PACKAGE

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4.4 SOT–23/ TO–236AB Surface Mount Bias Resistor Transistors IC (mA)

Device Marking

Device

VCEO (V)

hFE@IC Max

Min

R1 (kΩ)

(mA)

R2 (kΩ)

LDTA144GLT1G LDTA115GLT1G LDTD123TLT1G LDTD143TLT1G LDTD114TLT1G LDTD113ELT1G

P28 P29 E1 E2 E3 E4

100 100 500 500 500 500

50 50 50 50 50 50

68 68 100 56 33 39

– – 600 – – –

5 5 50 50 50 50

– – 2.2 4.7 10 1

47 100 – – – 1

LDTD123ELT1G LDTD143ELT1G LDTD114GLT1G LDTD113ZLT1G LDTD123YLT1G LDTD114ELT1G LDTB123TLT1G LDTB143TLT1G LDTB114TLT1G LDTB113ELT1G LDTB123ELT1G LDTB143ELT1G LDTB114GLT1G LDTB113ZLT1G LDTB123YLT1G LDTB114ELT1G LDTDG12GPLT1G LDTBG12GPLT1G

E5 E6 E7 E8 E9 E10 K1 K2 K3 K4 K5 K6 K7 K8 K9 K10 H1 H2

500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 1000 1000

50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50

47 56 100 56 56 100 33 100 56 39 47 56 – 56 56 100 – –

– – 600 – – 600 – 600 – – – – – – – 600 – –

50 50 100 50 50 50 50 50 50 50 50 50 100 50 50 50 – –

2.2 4.7 – 1 2.2 10 2.2 4.7 10 1 2.2 4.7 – 1 2.2 10 1 1

2.2 4.7 10 10 10 10 – – – 1 2.2 4.7 10 10 10 10 22 22

3

NPN NPN NPN NPN NPN NPN NPN PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP NPN PNP

3

R1 1

R2

NPN

PNP PNP NPN NPN NPN

3

R1 1

Polarity

2

R2 1

2

PNP

2

PACKAGE

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5. SC–88/ SOT–363 Surface Mount Dual Bias Resistor Transistors

3

2

1

R1

Q1

3

R2

2

1

R1

Q1 Q2

R2 4

R2 6

A

2 Q1

4

R2 6

B

4

4.7 10 22 47 22 47 47

4 5

R2

6 3

R1 5

2 6

C

Style A A A A A A B B B C C C C B B B B

10

Q2

R1 5

10 22 47 47

1

R1

Q2

R1 5

3

R2

10 22 47 10 10 4.7 10 4.7 4.7 10 22 10 10 22 47 10 10

8

50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50

8

100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100

R2 (kΩ)

8

7A 7B 7C 7D 7E 7F 0A 0F 0J 11 12 14 15 0B 0C 0D 0E

Min 35 60 80 80 160 160 35 160 15 35 60 80 160 60 80 80 160

R1 (kΩ)

8

(mA)

hFE@I C (mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5 5 5 5

8

LMUN5211DW1T1G LMUN5212DW1T1G LMUN5213DW1T1G LMUN5214DW1T1G LMUN5215DW1T1G LMUN5216DW1T1G LMUN5111DW1T1G LMUN5116DW1T1G LMUN5132DW1T1G LMUN5311DW1T1G LMUN5312DW1T1G LMUN5314DW1T1G LMUN5315DW1T1G LMUN5112DW1T1G LMUN5113DW1T1G LMUN5114DW1T1G LMUN5115DW1T1G

VCEO (V)

IC

Device Marking

Device

1

PACKAGE

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5.1 SC–88/ SOT–363 Surface Mount Dual Bias Resistor Transistors VCEO

R1 (kΩ)

hFE@I C

(V) 50 50

Min

(mA) 5 5

1 2.2

5 5 5

4.7 22 2.2

5 5 5

100 47 1

15 80 80 80 80 80 80 160

5 5 5 5 5 5 5 5 5

2.2 4.7 4.7 22 2.2 100 47 47 4.7

3 8 80 80

50 50 50

80 80 80

50 50 50

R2 (kΩ)

8

IC Device Marking (mA) 100 LMUN5130DW1T1G 0G LMUN5131DW1T1G 0H 100 LMUN5133DW1T1G 0K 100 100 LMUN5134DW1T1G 0L LMUN5135DW1T1G 0M 100 LMUN5136DW1T1G 0N 100 100 LMUN5137DW1T1G 0P LMUN5230DW1T1G 7G 100 LMUN5231DW1T1G 7H 100 Device

3 8

1

Style B B

2.2 47 47

B B B

47 100 22

B B A

1 2.2 4.7 47 47 47 100 22 47

A A A A A A A C

100 100 100 100 100 100 100 100

50 50 50 50 50 50 50 50 50

LMUN5330DW1T1G 30 LMUN5331DW1T1G 31

100 100

50 50

3 8

5 5

1 2.2

1 2.2

C C C

LMUN5332DW1T1G LMUN5333DW1T1G LMUN5334DW1T1G LMUN5335DW1T1G LMUN5336DW1T1G

100 100 100 100 100

50 50 50 50 50

15 80 80 80 80

5 5 5 5 5

4.7 4.7 22 2.2 100

4.7 47 47 47 100

C C C C C

LMUN5232DW1T1G LMUN5233DW1T1G LMUN5234DW1T1G LMUN5235DW1T1G LMUN5236DW1T1G LMUN5237DW1T1G LMUN5313DW1T1G LMUN5316DW1T1G

3

7J 7K 7L 7M 7N 7P 13 16

32 33 34 35 36 2

1

R1

Q1

3

R2

2

1

R1

Q1 Q2

R2 4

R2 6

A

R2

2

1

R1

Q1 Q2

R1 5

3

4

R2 6

B

6 3

Q2

R1 5

4 5

R2

4

R1 5

2 6

C

1

PACKAGE

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SWITCHING TRANSISTORS 1. SC–89 Surface Mount General Purpose Switching Transistors 2. SC–70/ SOT–323 Surface Mount General Purpose Switching Transistors 3. SOT–23/ TO– 236AB Surface Mount General Purpose Switching Transistors 4. SC–88/ SOT–363 Surface Mount General Purpose Switching Duals Transistors

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SWITCHING TRANSISTORS

1. SC–89 Surface Mount General Purpose Switching Transistors Device

Device Marking

LMBT3904TT1G MA LMBT3906TT1G 2A LMBT2222ATT1G 1P

IC (mA) 200 200 600

VCEO (V) 40 40 40

Note*: Min

hFE

fT IC (MHz) Min/Max (mA) 100/300 100/300 100/–

10 10 150

3

1

300* 250* 300*

td (ns) 35 35 10

tr (ns)

ts (ns)

35 35 25

200 225 225

3

3

2

PACKAGE

tf (ns) 50 75 60

Polarity NPN PNP NPN

1 1

NP N

2

PN P

2

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2. SC–70/ SOT–323 Surface Mount General Purpose Switching Transistors Device LMBT3904WT1G LMBT3906WT1G LMBT2222AWT1G LMBT2907AWT1G LMBT4401WT1G LMBT4403WT1G

Device Marking AM 2A 1P 20 2X 2T

IC (mA) 200 200 600 600 600 600

hFE

VCEO (V)

fT I C (MHz) (mA)

Min/Max

40 40 40 60 40 40

100/300 100/300 100/300 100/– 80/– 100/–

1.0 1.0 150 150 10 10

3

300 250 300 200 250 200

td

tr (ns)

(ns) 35 35 10 10 15 15

35 35 25 40 20 20

ts (ns) 200 225 225 80 225 225

tf (ns) 50 75 60 30 30 30

Polarity NPN PNP NPN PNP NPN PNP

3 3

1

1

2 1

NPN

PNP

2

2

PACKAGE

3. SOT–23/ TO–236AB Surface Mount General Purpose Switching Transistors Device LMBT3906LT1G LMBT4401LT1G LMBT4403LT1G LMBT2222ALT1G LMBT2369ALT1G LMBT2369LT1G LMBT2907ALT1G LMBT3904LT1G

Device I C VCEO Marking (mA) (V) 2A 2X 2T 1P 1JA M1J 2F 1AM

200 600 600 600 200 200 600 200

40 40 40 40 15 15 60 40

hFE

VCE(sat) IC/VCE IC/IB Min/Max (mA)/(V) (Volts) (mA)

tf td ts tr Polarity (MHz) (ns) (ns) (ns) (ns)

100/300 80 100 40 120 40/120 100 100/300

250 250 200 300 – – 200 300

10/1.0 10/1.0 10/1.0 500/10 10/1.0 10/1.0 10/1.0 10/1.0

3

0.4 0.4 0.4 0.3 0.2 0.2 0.4 0.3

50/5.0 150/15 150/1.5 150/15 10/1.0 10/1.0 150/15 50/5.0

fT

35 15 15 10 – – 10 35

35 20 20 25 – – 40 35

225 225 225 225 13 13 80 200

75 30 30 60 – – 30 50

PNP NPN PNP NPN NPN NPN PNP NPN

3 3

1

1 2

NPN

1 2

PNP

2

PACKAGE

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4. SC–88/ SOT–363 Surface Mount General Purpose Switching Duals Transistors

LMBT2907ADW1T1G LMBT3904DW1T1G LMBT3906DW1T1G LMBT2222ADW1T1G LMBT3946DW1T1G

2F MA A2 XX 46

600 200 200 600 200

NPN LMBT2907ADW1T1G LMBT3904DW1T1G LMBT3906DW1T1G LMBT2222ADW1T1G LMBT3946DW1T1G 2

(V)

Min

60 40 40 40 40

t d (ns)

Device

3

hFE @/I C

VCEO

1

3

35 10 – 35 – 2

10 10 10 150

200 300 250 300

B A B A

100

300

10

250

C

NPN

3

Style

300 300 300

35 – 35 – 25 1

fT (MHz)

100 100 100 100

t r (ns)

PNP

35 – 35 – 10

(mA)

Max 8

IC (mA)

Device Marking

Device

2

t s (ns) PNP

NPN

PNP

t f (ns) NPN

PNP

35 40 – 35

200 – 200 –

225 80 – 225

50 – 50 –

75 30 – 75

–

225

–

60

–

1

3

2

4

1 5 6

R1

3

R2

2 1

4

5

6

A

4

5

6

B

4

5

6

C

4

5

6

PACKAGE D ( R1=10kΩ  R2=10kΩ )

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MOS FETs 1. 2. 3. 4. 5. 6.

SOT–323/ SC–70 Surface Mount MOS FETs SOT–23/ TO–236AB Surface Mount MOS FETs SC–88/ SOT-363 Surface Mount MOS FETs SC–74 SOT–23–6 Surface Mount MOS FETs SOP–8 Power MOS FET s TSSOP–8 Power MOS FETs

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MOS FETs

1. SOT–323/ SC–70 Surface Mount MOS FETs Device

Marking

LRK7002WT1G LBSS138WT1G LBSS84WT1G L2N7002WT1G

6C J1 PD 6C

VDSS (V) 60 50 50 60

ID Cont (mA) 115 200 100 500

3 Drain

RDS(on) Max (Ω) 7.5 10 10 7.5

ID (mA) 50 200 100 50

VGS(th) Min (V)

Switching Time

Max (V) 2.5 1.5 2.0 2.5

1 0.5 0.9 1.0

3 Drain

td(on) (ns) – – – 7.0

Polarity

td(off) (ns) – – – 11

N–Channel N–Channel P–Channel N-Channel

3 Drain 3

1 Gate

* ESD Protect

1 Gate

1 Gate

2 1

2 Source

2 Source

2 Source

N–Channel

P–Channel

PACKAGE

LRK7002WT1G

2. SOT–23/ TO–236AB Surface Mount MOS FETs Device LBSS84LT1G LBSS123LT1G LBSS138LT1G L2N7002LT1G SRK7002LT1G* L2N7002SLT1G

Device Marking PD SA J1 702 RK 703

VDSS (V) 50 100 50 60 60 60

ID Cont (mA) 100 170 200 115 115 115

3 Drain

VGS(th)

RDS(on) Max (Ω) 10 6.0 3.5 7.5 7.5 2.5

Switching Time Polarity

ID (mA) 100 100 200 500 50

Min (V) 0.8 0.8 0.5 1.0 1.0

Max (V) 2.0 2.8 1.5 2.5 2.5

td(on) (ns) 2.5 20 20 20 20

td(off) (ns) 16 40 20 40 30

P–Channel N–Channel N–Channel N–Channel N–Channel

50

1.0

2.0

7

11

N–Channel

3 Drain

3 Drain 3

1 Gate

1 Gate

1 Gate 2 Source

P–Channel

* ESD Protect 2 1

2 Source

N–Channel

2 Source

PACKAGE

SRK7002LT1G

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2.1 SOT–23/ TO–236AB Surface Mount MOS FETs Device LP2301LT1G LN2302LT1G LN2312LT1G LN2306LT1G LP2307LT1G LN4501LT1G

Max (Ω) 0.10 0.06 0.031 0.03 0.06 0.08

(A)

-20 20 20 20 -16 20

RDS(on)

RDS(on)

ID Cont

VDSS (V)

-2.3 2.3 4.9 5.3 -4.0 3.2

Max (Ω) 0.15 0.115 0.047 0.035 0.07 0.105

ID (A) -2.8 2.8 5.0 5.5 -4.0 3.6

3 Drain

ID (A) -2.0 2.0 4.0 5.3 -3.0 3.1

VGS(th) Min (V) -0.45 0.65 0.4 0.5 – 0.65

Switching Time td(off) (ns) 36.05 16.61 48.0 18.4 54.0 12.0

td(on) (ns) 17.28 6.16 15.0 6.0 8.0 6.5

Max (V) -0.95 1.2 1.0 – -1.0 1.2

Polarity P-Channel N-Channel N-Channel N-Channel P-Channel N-Channel

3 Drain 3

1 Gate

1 Gate

2 1

2 Source

2 Source

PACKAGE

N–Channel

P–Channel

2.2 SOT–23/ TO–236AB Surface Mount MOS FETs Device L4N02LT1G L3P03LT1G LP4101LT1G

ID (A)

BVDSS (V) 20 -30 -20

4 -3 -2.3

VGS (V) ±12 ±20 ±8

3 Drain

Vth (V)

10V 0.6(min) – -1(min) 80 -0.45(min) –

RDS(ON) Max(mΩ) 4.5V 2.5V 45 80 140 – 100 150

Polarity N-Channel P-Channel P-Channel

3 Drain 3

1 Gate

2

1 Gate 2 Source

P–Channel

1 2 Source

PACKAGE

N–Channel

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3. SC–88/ SOT-363 Surface Mount MOS FETs Device

VDSS

Marking

(V)

L2N7002DW1T1G 702 LBSS8402DW1T1G KNP

60 60

ID Cont (mA) 115 115

RDS(on) Max (Ω) 7.5 7.5

VGS(th)

ID (mA) 50 50

Min (V) 1.0 1.0

Switching Time td(off) (ns) 40 11

td(on) (ns) 20 7.0

Max (V) 2.5 2.5

Polarity N-Channel N-Channel P-Channel

4 6

5

4

6

5

4

5 6

1

2

3

1

2

3

3

2 1

PACKAGE

4. SC–74 SOT–23–6 Surface Mount MOS FETs Device LN9926LT1G

VDSS (V)

ID Cont

20

6

Max (Ω) 0.03

(A)

ID (A) 6.0

Max (Ω) 0.04

1 Drain

Switching Time

VGS(th)

RDS(on)

RDS(on)

ID (A) 5.2

Min (V) 0.6

td(off) (ns) 21.85

td(on) (ns) 8.1

Max (V) 1.5

2 Drain

Polarity Dual-N-Channel

4 5 6

1 Gate

3

2 Gate

N–Channel

1 Source

2 1

N–Channel

PACKAGE

2 Source

5. SOP–8 Power MOS FETs Device LN9926

VDSS (V) 20

ID Cont (A) 4.6

RDS(on) Max (Ω) 0.028

ID (A) 4

RDS(on) Max (Ω) 0.04

ID (A) 2

1 Drain

1 Gate

N–Channel

VGS(th) Min (V) 0.5

Max (V) -

Switching Time td(on) (ns) 5

td(off) (ns) 26.2

Polarity Dual-N-Channel

2 Drain

2 Gate 1 Source

N–Channel

2 Source

PACKAGE

If you want to get more information about product,welcome to call 0769-22026262 or email [email protected] www.dynasty-union.com

76

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6. TSSOP–8 Power MOS FETs Device LN9926L

VDSS (V) 20

ID Cont (A) 4.6

RDS(on) Max (Ω) 0.028

ID (A) 4

RDS(on) Max (Ω) 0.04

ID (A) 2

1 Drain

1 Gate

N–Channel

VGS(th) Min (V) 0.5

Switching Time td(on) (ns)

Max (V) –

5

td(off) (ns) 26.2

Polarity Dual-N-Channel

2 Drain

2 Gate 1 Source

N–Channel

2 Source

PACKAGE

If you want to get more information about product,welcome to call 0769-22026262 or email [email protected] www.dynasty-union.com

77

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INTEGRATED CIRCUIT 1.  DC-DC 2.  AC-DC 3.  Amplifiers and Comparator 4.  LED Driver 5.  Voltage Reference 6.  V-Detector/Reset 7.  Charge Pump 8.  Low Dropout Voltage Regulator 9.  Dual Low Dropout Voltage Regulator 10.  One-Gate Logic

www.dynasty-union.com

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INTEGRATED CIRCUIT 1.  DC-DC Description VIN Frequency Efficiency(%) (V) (MHz) LR8301 SOT23-5 PFM;STEP-UP(BOOST) 85 ≥0.9 0.1 73~90 LR2596 TO220(263)-5 PWM;STEP-DOWN(BUCK) 4.5~40 0.15 LR34063 DIP(SOP)8 STEP-UP/STEP3~40 0.1 STEP-UP:87.7 DOWN/INVERTING STEP-DOWN:83.7 INVERTING:62.2 Device

Package

Mode

IOMAX VOUT (A) (V) 1.8~6.5(0.1V Step) 1.0 3.0 3.3/5/12 or Adj 1.5 Adj

2.  AC-DC Device

Package

VIN(V)

LR2257 SOP8

Description Standby PD(W)

Frequency(kHz)

9~12

70

< 0.3

LLIM(mA) VSW(V) 400

> 400V

EMI (dBµV)